发明申请
US20080299724A1 METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
失效
制造具有嵌入式压力器的半导体器件的方法
- 专利标题: METHOD OF MAKING A SEMICONDUCTOR DEVICE WITH EMBEDDED STRESSOR
- 专利标题(中): 制造具有嵌入式压力器的半导体器件的方法
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申请号: US11756095申请日: 2007-05-31
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公开(公告)号: US20080299724A1公开(公告)日: 2008-12-04
- 发明人: Paul A. Grudowski , Veeraraghavan Dhandapani , Darren V. Goedeke , Voon-Yew Thean , Stefan Zollner
- 申请人: Paul A. Grudowski , Veeraraghavan Dhandapani , Darren V. Goedeke , Voon-Yew Thean , Stefan Zollner
- 主分类号: H01L21/336
- IPC分类号: H01L21/336
摘要:
A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming an insulating layer over a sidewall of the gate electrode; defining source and drain regions in the semiconductor substrate adjacent to the insulating layer; implanting a dopant in the source and drain regions of the semiconductor substrate to form doped source and drain regions; forming a sidewall spacer adjacent to the insulating layer; forming a recess in the semiconductor substrate in the source and drain regions, wherein the recess extends directly underneath the spacer a predetermined distance from a channel regions; and forming a stressor material in the recess. The method allows the stressor material to be formed closer to a channel region, thus improving carrier mobility in the channel while not degrading short channel effects.