发明申请
- 专利标题: Light-emitting device, electronic device, and manufacturing method of light-emitting device
- 专利标题(中): 发光装置,电子装置以及发光装置的制造方法
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申请号: US12213094申请日: 2008-06-13
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公开(公告)号: US20080308794A1公开(公告)日: 2008-12-18
- 发明人: Takahiro Ibe , Hisao Ikeda , Junichi Koezuka , Kaoru Kato
- 申请人: Takahiro Ibe , Hisao Ikeda , Junichi Koezuka , Kaoru Kato
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2007-157434 20070614
- 主分类号: H01L35/24
- IPC分类号: H01L35/24 ; H01L51/40
摘要:
The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
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