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    Memory device and semiconductor device
    1.
    发明授权
    Memory device and semiconductor device 有权
    存储器件和半导体器件

    公开(公告)号：US07875881B2

    公开(公告)日：2011-01-25

    申请号：US12054914

    申请日：2008-03-25

    申请人： Hisao Ikeda ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Hisao Ikeda ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L29/08

    CPC分类号： H01L27/286 ,  H01L27/112 ,  H01L27/115 ,  Y10S428/917 ,  Y10T428/24942

    摘要： Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.

    摘要翻译： 目的是解决对存储元件的小型化的抑制和其制造过程的复杂性，并且提供一种非易失性存储器件和半导体器件，每个非易失性存储器件和半导体器件具有存储器件，其中可以额外地写入数据，除了在制造时， 可以防止由数据重写引起的伪造等，以及便宜且非易失性的存储器件和半导体器件。 本发明提供了一种半导体器件，其包括多个存储元件，每个存储元件分别具有第一导电层，位于第一导电层旁边的第二导电层和设置在同一绝缘膜上的混合膜。 混合膜包含无机化合物，有机化合物和卤素原子，并且设置在第一导电层和第二导电层之间。

    Light-emitting device, electronic device, and manufacturing method of light-emitting device
    2.
    发明申请
    Light-emitting device, electronic device, and manufacturing method of light-emitting device 有权
    发光装置，电子装置以及发光装置的制造方法

    公开(公告)号：US20080308794A1

    公开(公告)日：2008-12-18

    申请号：US12213094

    申请日：2008-06-13

    申请人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L35/24 ,  H01L51/40

    CPC分类号： H01L51/5284 ,  H01L51/5052

    摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

    摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

    LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
    3.
    发明申请
    LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
    发光装置，其制造方法和电子装置

    公开(公告)号：US20120080714A1

    公开(公告)日：2012-04-05

    申请号：US13323886

    申请日：2011-12-13

    申请人： Hisao IKEDA ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Hisao IKEDA ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L33/36

    CPC分类号： H01L51/52 ,  H01L27/3283 ,  H01L51/002 ,  H01L51/5052 ,  H01L51/5088 ,  H01L51/5215 ,  H01L2251/5392 ,  H01L2251/558

    摘要： The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.

    摘要翻译： 本发明提供一种发光装置，其在基板上包括发光元件，发光元件通过分隔壁与相邻的发光元件隔开，所述发光元件包括第一电极，层 形成在所述第一电极上方，形成在所述层上的发光层和形成在所述发光层上的第二电极，所述层包含无机化合物，有机化合物和卤素原子，所述隔壁包含所述无机化合物和 有机化合物和层。 发光装置提供更高的可靠性和更少的缺陷。

    Light-emitting device, electronic device, and manufacturing method of light-emitting device
    7.
    发明授权
    Light-emitting device, electronic device, and manufacturing method of light-emitting device 有权
    发光装置，电子装置以及发光装置的制造方法

    公开(公告)号：US07838874B2

    公开(公告)日：2010-11-23

    申请号：US12213094

    申请日：2008-06-13

    申请人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L51/54

    CPC分类号： H01L51/5284 ,  H01L51/5052

    摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

    摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

    Light-emitting device and electronic device
    9.
    发明授权
    Light-emitting device and electronic device 有权
    发光装置和电子装置

    公开(公告)号：US08319212B2

    公开(公告)日：2012-11-27

    申请号：US12948198

    申请日：2010-11-17

    申请人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Takahiro Ibe ,  Hisao Ikeda ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L51/54

    CPC分类号： H01L51/5284 ,  H01L51/5052

    摘要： The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.

    摘要翻译： 本发明提供一种具有高对比度的发光元件和发光装置，具体地说，提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层，使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外，在形成有用于驱动发光元件的薄膜晶体管，形成布线的区域等的区域上也形成光吸收层，从而从侧面提取光 与形成TFT的区域相反，从而减少外部光的反射。

    Method for manufacturing memory device
    10.
    发明授权
    Method for manufacturing memory device 有权
    制造存储器件的方法

    公开(公告)号：US08187917B2

    公开(公告)日：2012-05-29

    申请号：US13008148

    申请日：2011-01-18

    申请人： Hisao Ikeda ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    发明人： Hisao Ikeda ,  Takahiro Ibe ,  Junichi Koezuka ,  Kaoru Kato

    IPC分类号： H01L29/08

    CPC分类号： H01L27/286 ,  H01L27/112 ,  H01L27/115 ,  Y10S428/917 ,  Y10T428/24942

    摘要： Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.

    摘要翻译： 目的是解决对存储元件的小型化的抑制和其制造过程的复杂性，并且提供一种非易失性存储器件和半导体器件，每个非易失性存储器件和半导体器件具有存储器件，除了制造之外，可以另外写入数据， 其中可以防止由重写数据引起的伪造等，以及便宜且不挥发的存储器件和半导体器件。 本发明提供了一种半导体器件，其包括多个存储元件，每个存储元件分别具有第一导电层，位于第一导电层旁边的第二导电层和设置在同一绝缘膜上的混合膜。 混合膜包含无机化合物，有机化合物和卤素原子，并且设置在第一导电层和第二导电层之间。