发明申请
US20080310808A1 PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER
审中-公开
光子波形结构与平面化的封闭层
- 专利标题: PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER
- 专利标题(中): 光子波形结构与平面化的封闭层
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申请号: US11764447申请日: 2007-06-18
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公开(公告)号: US20080310808A1公开(公告)日: 2008-12-18
- 发明人: David Michael Fried , Philip Charles Danby Hobbs , Nancy Carolyn LaBianca , Frank Robert Libsch
- 申请人: David Michael Fried , Philip Charles Danby Hobbs , Nancy Carolyn LaBianca , Frank Robert Libsch
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G02B6/10
- IPC分类号: G02B6/10 ; C23F1/02
摘要:
A photonic waveguide structure includes a first photonic waveguide layer located over a substrate. A sidewall cladding layer is located cladding a sidewall, but not covering a top, of the first photonic waveguide layer. A second photonic waveguide layer may be located upon the top of the sidewall cladding layer while contacting, but not straddling, the first photonic waveguide layer. The sidewall cladding layer protects the first photonic waveguide layer from environmental exposure, thus providing enhanced performance of a photonic waveguide structure. A planarizing sidewall cladding layer allows the fabrication of optical chips with multiple layers of lithographically defined devices.
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