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    PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER
    1.
    发明申请
    PHOTONIC WAVEGUIDE STRUCTURE WITH PLANARIZED SIDEWALL CLADDING LAYER 审中-公开
    光子波形结构与平面化的封闭层

    公开(公告)号：US20080310808A1

    公开(公告)日：2008-12-18

    申请号：US11764447

    申请日：2007-06-18

    申请人： David Michael Fried ,  Philip Charles Danby Hobbs ,  Nancy Carolyn LaBianca ,  Frank Robert Libsch

    发明人： David Michael Fried ,  Philip Charles Danby Hobbs ,  Nancy Carolyn LaBianca ,  Frank Robert Libsch

    IPC分类号： G02B6/10 ,  C23F1/02

    CPC分类号： G02B6/136

    摘要： A photonic waveguide structure includes a first photonic waveguide layer located over a substrate. A sidewall cladding layer is located cladding a sidewall, but not covering a top, of the first photonic waveguide layer. A second photonic waveguide layer may be located upon the top of the sidewall cladding layer while contacting, but not straddling, the first photonic waveguide layer. The sidewall cladding layer protects the first photonic waveguide layer from environmental exposure, thus providing enhanced performance of a photonic waveguide structure. A planarizing sidewall cladding layer allows the fabrication of optical chips with multiple layers of lithographically defined devices.

    摘要翻译： 光子波导结构包括位于衬底上的第一光子波导层。 侧壁包层定位为包覆第一光子波导层的侧壁但不覆盖顶部。 第二光子波导层可以位于侧壁包层的顶部，同时接触但不跨越第一光子波导层。 侧壁包覆层保护第一光子波导层免受环境暴露，从而提供光子波导结构的增强的性能。 平面化的侧壁包层允许制造具有多层光刻定义的器件的光学芯片。