发明申请
- 专利标题： TILTED PLASMA DOPING
- 专利标题（中）： 倾斜等离子喷涂
-
申请号： US12200178申请日： 2008-08-28
-
公开(公告)号： US20080317968A1公开(公告)日： 2008-12-25
- 发明人: Vikram SINGH , James Steve Buff , Rajesh Dorai
- 申请人： Vikram SINGH , James Steve Buff , Rajesh Dorai
- 申请人地址： US MA Gloucester
- 专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
- 当前专利权人地址： US MA Gloucester
- 主分类号： C23C14/00
- IPC分类号： C23C14/00
摘要：
A plasma doping apparatus includes a chamber and a plasma source that generates ions in the chamber from a dopant gas. A grating is positioned in the chamber. A platen for supporting a target is positioned in the chamber. At least one of the grating and the target are oriented so that dopant ions extracted from the grating impact the target at a non-normal angle of incidence.
信息查询
IPC分类:
