发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
-
申请号： US12149572申请日： 2008-05-05
-
公开(公告)号： US20080318404A1公开(公告)日： 2008-12-25
- 发明人: Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
- 申请人： Masamichi Suzuki , Daisuke Matsushita , Takeshi Yamaguchi
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 优先权： JP2004-264828 20040913
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A semiconductor device includes a silicon substrate; an insulation layer formed on the silicon substrate, the insulation layer containing an oxide of an element of at least one kind selected from at least Hf, Zr, Ti and Ta; an electrode formed on the insulation layer; and a metal oxide layer containing La and Al, the metal oxide layer being provided at at least one of an interface between the silicon substrate and the insulation layer and an interface between the insulation layer and the electrode.