Invention Application
US20090001057A1 Dual damascene trench depth detection and control using voltage impedance RF probe
审中-公开
使用电压阻抗RF探头进行双镶嵌深沟探测和控制
- Patent Title: Dual damascene trench depth detection and control using voltage impedance RF probe
- Patent Title (中): 使用电压阻抗RF探头进行双镶嵌深沟探测和控制
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Application No.: US11824503Application Date: 2007-06-29
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Publication No.: US20090001057A1Publication Date: 2009-01-01
- Inventor: Cheng-Hsin Ma , Jeff J. Xu
- Applicant: Cheng-Hsin Ma , Jeff J. Xu
- Main IPC: B23K10/00
- IPC: B23K10/00
Abstract:
In one embodiment, a system to measure changes and a dual damascene trench depth, comprises a power source, and impedance matching network coupled to the power source and to an electrode, a radio frequency sensor coupled to the impedance matching network, and a controller to establish a baseline correlation between a plasma impedance and the dual damascene trench depth, and use the baseline correlation to measure changes in the dual damascene trench depth.
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