发明申请
- 专利标题： Insb Thin Film Magnetic Sensor and Fabrication Method Thereof
- 专利标题（中）： Insb薄膜磁传感器及其制作方法
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申请号： US12087149申请日： 2006-12-27
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公开(公告)号： US20090001351A1公开(公告)日： 2009-01-01
- 发明人: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
- 申请人： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
- 优先权： JP2005-376435 20051227
- 国际申请： PCT/JP2006/326038 WO 20061227
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L21/20
摘要：
The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0≦x, y≦1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.
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