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公开(公告)号：US07723814B2
公开(公告)日：2010-05-25
申请号：US12087149
申请日：2006-12-27
Applicant: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
Inventor： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
IPC: H01L21/00
CPC classification number: G01R33/06 , H01L43/065 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0≦x, y≦1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.
Abstract translation: 本发明涉及一种用于微型InSb薄膜磁传感器中的薄膜层压体，其可以高灵敏度地直接检测磁通密度并且具有小的功耗和消耗电流，以及InSb薄膜磁传感器。 InSb薄膜磁传感器使用InSb薄膜作为磁传感器部分或磁检测部分。 该传感器包括作为形成在基板上的InSb薄膜的InSb层和显示出高于InSb层或绝缘体的电阻的Al x Ga y In 1-x-y Sb混合晶体层（0＆amp; nlE; x，y＆nlE; 1） 类型导通，并且具有比InSb大的带隙。 混合晶体层设置在基板和InSb层之间，Al和Ga原子的含量（x + y）在5.0〜17％的范围内。
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公开(公告)号：US20090001351A1
公开(公告)日：2009-01-01
申请号：US12087149
申请日：2006-12-27
Applicant: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
Inventor： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
CPC classification number: G01R33/06 , H01L43/065 , H01L43/08 , H01L43/12 , H01L43/14
Abstract: The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an AlxGayIn1-x-ySb mixed crystal layer (0≦x, y≦1) which shows resistance higher than the InSb layer or insulation, or p-type conduction, and has a band gap larger than that of InSb. The mixed crystal layer is provided between the substrate and the InSb layer, and has a content of Al and Ga atoms (x+y) in the range of 5.0 to 17%.
Abstract translation: 本发明涉及一种用于微型InSb薄膜磁传感器中的薄膜层压体，其可以高灵敏度地直接检测磁通密度并且具有小的功耗和消耗电流，以及InSb薄膜磁传感器。 InSb薄膜磁传感器使用InSb薄膜作为磁传感器部分或磁检测部分。 传感器包括作为形成在基板上的InSb薄膜的InSb层和表现出高于InSb层或绝缘体的电阻的Al x Ga y In 1-x-y Sb混合晶体层（0 <= x，y <= 1），或 p型导电，并且具有比InSb大的带隙。 混合晶体层设置在基板和InSb层之间，Al和Ga原子的含量（x + y）在5.0〜17％的范围内。
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3.发明授权Thin film lamination, thin film magnetic sensor using the thin film lamination and method for manufacturing the thin film lamination 有权薄膜叠层，使用薄膜层压的薄膜磁传感器和制造薄膜层压体的方法公开(公告)号：US08154280B2
公开(公告)日：2012-04-10
申请号：US12516538
申请日：2007-11-29
Applicant: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
Inventor： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
IPC: G01R33/02 , H01L31/107
CPC classification number: H01L29/201 , G01R33/07 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L43/065 , H01L43/08 , H01L43/10 , H01L43/12 , H01L43/14 , Y10T428/12681
Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1−xSb mixed crystal layer formed on a substrate, and an InAsxSb1−x (0
Abstract translation: 关于使用该薄膜层叠体的薄膜层叠体和薄膜磁传感器以及实现作为InAsSb操作层的具有高电子迁移率和薄层电阻的薄膜导电层的薄膜层压体的制造方法。 提供了一种薄膜层压体，其特征在于在基板上形成Al x In 1-x Sb混合晶体层，以及直接形成在Al x In 1-x Sb层上的InAs x Sb 1-x（0
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4.发明申请公开(公告)号：US20100045282A1
公开(公告)日：2010-02-25
申请号：US12516538
申请日：2007-11-29
Applicant: Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
Inventor： Ichiro Shibasaki , Hirotaka Geka , Atsushi Okamoto
CPC classification number: H01L29/201 , G01R33/07 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/0262 , H01L43/065 , H01L43/08 , H01L43/10 , H01L43/12 , H01L43/14 , Y10T428/12681
Abstract: Relating to a thin film lamination and a thin film magnetic sensor using the thin film lamination and a method for manufacturing the thin film lamination that realizes a thin film conducting layer having high electron mobility and sheet resistance as an InAsSb operating layer. A thin film lamination is provided which is characterized by having an AlxIn1-xSb mixed crystal layer formed on a substrate, and an InAsxSb1-x (0
Abstract translation: 关于使用该薄膜层叠体的薄膜层叠体和薄膜磁传感器以及实现作为InAsSb操作层的具有高电子迁移率和薄层电阻的薄膜导电层的薄膜层压体的制造方法。 提供了一种薄膜层压体，其特征在于在基板上形成Al x In 1-x Sb混合晶体层，以及直接形成在Al x In 1-x Sb层上的InAs x Sb 1-x（0
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5.发明授权公开(公告)号：US06590389B1
公开(公告)日：2003-07-08
申请号：US09762327
申请日：2001-02-06
Applicant: Ichiro Shibasaki , Atsushi Okamoto , Takashi Yoshida , Ichiro Okada
Inventor： Ichiro Shibasaki , Atsushi Okamoto , Takashi Yoshida , Ichiro Okada
IPC: H01L4308
CPC classification number: G01R33/09 , G01R33/06 , H01L43/10 , Y10T428/11
Abstract: An InxGa1−xAsySb1−y (0
Abstract translation: 在电介质基板上形成电子浓度为2×10 16 / cm 3以上的In x Ga 1-x As y Sb 1-y（0
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Patent Agency Ranking
公开(公告)号：US5453727A
公开(公告)日：1995-09-26
申请号：US988928
申请日：1993-03-15
Applicant: Ichiro Shibasaki , Naohiro Kuze , Tatsuro Iwabuchi , Kazuhiro Nagase
Inventor： Ichiro Shibasaki , Naohiro Kuze , Tatsuro Iwabuchi , Kazuhiro Nagase
IPC: H01L31/0304 , H01L43/06 , H01L43/00
CPC classification number: H01L31/03046 , H01L43/065 , Y02E10/544
Abstract: The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0
Abstract translation: PCT No.PCT / JP92 / 00908 Sec。 371日期1993年3月15日 102（e）1993年3月15日PCT提交1992年7月16日PCT公布。 出版物WO93 / 02479 日期：1993年2月4日。本发明是制造不具有晶格紊乱的In x Ga 1-x As y Sb 1-y（0
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7.发明授权Polyamide-imide compositions and articles for electrical use prepared therefrom 失效聚酰胺 - 酰亚胺组合物和由其制备的电用制品
公开(公告)号：US4377652A
公开(公告)日：1983-03-22
申请号：US10290
申请日：1979-02-08
Applicant: Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
Inventor： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
Abstract: An article for electrical use such as insulative substrates, electrical circuit borads and electrical elements, wholly or partly consisting out of an aromatic polyamide-imide having a reduced viscosity of from about 0.3 to 1.5, which polyamide-imide may contain a granular material dispersed therein, and a composition comprising 100 parts by weight of said polyamide-imide and additional about 100 to 4,000 parts by weight of a granular material and optionally about 10 to 10,000 parts by weight of a polar organic solvent.
Abstract translation: 一种用于电气用途的物品，例如绝缘基材，电路桥接器和电气元件，其全部或部分由具有约0.3至1.5的比浓粘度的芳族聚酰胺 - 酰亚胺组成，该聚酰胺 - 酰亚胺可以含有分散在其中的颗粒状物质 ，以及包含100重量份所述聚酰胺 - 酰亚胺和另外约100至4,000重量份颗粒材料和任选地约10至10,000重量份极性有机溶剂的组合物。
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8.发明授权Polymers for use in heat resistant photoresist composition and process for preparing the same 失效用于耐热光致抗蚀剂组合物的聚合物及其制备方法
公开(公告)号：US4316974A
公开(公告)日：1982-02-23
申请号：US104050
申请日：1979-12-17
Applicant: Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
Inventor： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura
CPC classification number: C08G73/14 , G03F7/037 , G03F7/0387
Abstract: An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 - positions and having therein amide linkages and terminal groups unsubstituted or partially substituted with acrylate or methacrylate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
Abstract translation: 其中具有芳香族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺在其相应的1和3位上连接并且具有未取代或部分被丙烯酸酯或甲基丙烯酸酯基团取代的酰胺键和端基的化合物被发现赋予优异的耐热性和绝缘性 性质由其制备的光致抗蚀剂组合物。
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公开(公告)号：US07364628B2
公开(公告)日：2008-04-29
申请号：US10475617
申请日：2002-04-24
Applicant: Etsuji Kakimoto , Kiyotaka Dohke , Ichiro Shibasaki , Nobuyoshi Imaoka , Akira Chiba
Inventor： Etsuji Kakimoto , Kiyotaka Dohke , Ichiro Shibasaki , Nobuyoshi Imaoka , Akira Chiba
IPC: H01F1/059
CPC classification number: H01F41/0273 , B01J3/08 , B22F3/08 , B22F2998/10 , B22F2999/00 , C22C38/001 , C22C38/002 , C22C38/005 , H01F1/0596 , B22F2202/05 , B22F3/087 , B22F2201/05
Abstract: A solid material for a magnet, comprising a rare-earth/iron/nitrogen/hydrogen system magnetic material.
Abstract translation: 一种用于磁体的固体材料，包括稀土/铁/氮/氢系统磁性材料。
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10.发明授权
公开(公告)号：US4310641A
公开(公告)日：1982-01-12
申请号：US062800
申请日：1979-08-01
Applicant: Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
Inventor： Kaoru Ohmura , Ichiro Shibasaki , Takeo Kimura , Muneaki Kimura
IPC: C08G73/14 , G03F7/037 , G03F7/038 , C08F283/04 , C08G63/76
CPC classification number: C08G73/14 , G03F7/037 , G03F7/0387
Abstract: An organic polar solvent-soluble aromatic polyamide-imide having therein aromatic nuclei linked at their respective 1 - and 3 -positions and having therein amide linkages and terminal groups partially substituted with cinnamate groups is found to impart excellent heat resistance and insulating property to a photoresist composition produced therefrom.
Abstract translation: 其中具有其各自的1位和3位上具有酰胺键和部分被肉桂酸酯基取代的末端基团的芳族核的有机极性溶剂可溶性芳族聚酰胺 - 酰亚胺被发现赋予光致抗蚀剂优异的耐热性和绝缘性 由其制备的组合物。
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