发明申请
US20090001432A1 Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
有权
用于薄膜晶体管的沟道层，包括该薄膜晶体管的薄膜晶体管及其制造方法
- 专利标题： Channel layer for a thin film transistor, thin film transistor including the same, and methods of manufacturing the same
- 专利标题（中）： 用于薄膜晶体管的沟道层，包括该薄膜晶体管的薄膜晶体管及其制造方法
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申请号： US12073102申请日： 2008-02-29
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公开(公告)号： US20090001432A1公开(公告)日： 2009-01-01
- 发明人: Sun-il Kim , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
- 申请人： Sun-il Kim , I-hun Song , Young-soo Park , Dong-hun Kang , Chang-jung Kim , Jae-chul Park
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 优先权： KR10-2007-0063826 20070627
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L23/48 ; H01L21/44 ; H01L21/3205
摘要：
Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.
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