Invention Application
- Patent Title: PHOTORESIST TOPCOAT FOR A PHOTOLITHOGRAPHIC PROCESS
- Patent Title (中): 用于光刻机工艺的光刻胶贴片
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Application No.: US12128129Application Date: 2008-05-28
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Publication No.: US20090011377A1Publication Date: 2009-01-08
- Inventor: Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- Applicant: Robert David Allen , Ratnam Sooriyakumaran , Linda Karin Sundberg
- Main IPC: G03F7/20
- IPC: G03F7/20
Abstract:
A method of forming an image using a topcoat composition. A composition that includes functionalized polyhedral oligomeric silsesquioxanes derivatives of the formulas TmR3 where m is equal to 8, 10 or 12 and QnMnR1,R2,R3 where n is equal to 8, 10 or 12 are provided. The functional groups include aqueous base soluble moieties. Mixtures of the functionalized polyhedral oligomeric silsesquioxanes derivatives are highly suitable as a topcoat for photoresist in photolithography and immersion photolithography applications.
Public/Granted literature
- US07910290B2 Photoresist topcoat for a photolithographic process Public/Granted day:2011-03-22
Information query
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