发明申请
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11882012申请日： 2007-07-30
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公开(公告)号： US20090014809A1公开(公告)日： 2009-01-15
- 发明人: Katsuyuki Sekine , Tomonori Aoyama , Takuya Kobayashi
- 申请人： Katsuyuki Sekine , Tomonori Aoyama , Takuya Kobayashi
- 优先权： JP2006-208798 20060731; JP2007-158908 20070615
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L27/092 ; H01L29/423
摘要：
A semiconductor device includes a semiconductor substrate, and a p-channel MOS transistor provided on the semiconductor substrate, the p-channel MOS transistor comprising a first gate dielectric film including Hf, a second gate dielectric film provided on the first gate dielectric film and including aluminum oxide, and a first metal silicide gate electrode provided on the second gate dielectric film.
公开/授权文献
- US08022486B2 CMOS semiconductor device 公开/授权日：2011-09-20