发明申请
- 专利标题: Multi-chip stack structure and fabricating method thereof
- 专利标题(中): 多芯片堆叠结构及其制造方法
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申请号: US12011832申请日: 2008-01-29
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公开(公告)号: US20090014860A1公开(公告)日: 2009-01-15
- 发明人: Chung-Lun Liu , Jung-Pin Huang , Chin-Huang Chang , Chih-Ming Huang , Cheng-Hsu Hsiao
- 申请人: Chung-Lun Liu , Jung-Pin Huang , Chin-Huang Chang , Chih-Ming Huang , Cheng-Hsu Hsiao
- 申请人地址: TW Taichung
- 专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人: Siliconware Precision Industries Co., Ltd.
- 当前专利权人地址: TW Taichung
- 优先权: TW096125512 20070713
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L23/02
摘要:
A multi-chip stack structure and a manufacturing method thereof are provided. The fabrication method includes the steps of: providing a chip carrier having a first surface and a second surface opposing thereto and at least a first chip and a second chip mounted on the first surface; electrically connecting the chips to the chip carrier by a plurality of bonding wires; and stacking at least a third chip on the first and second chips by a film deposed therebetween, wherein the third chip is stepwise stacked on the first chip and at least a part of the bonding wire connected to the second chip is covered by the film, and electrically connecting the third chip and the chip carrier by a bonding wire, thereby enabling a plurality of chips to be stacked on the chip carrier to enhance the electrical performance of electronic products.
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