发明申请
US20090017621A1 Manufacturing method for semiconductor device and manufacturing device of semiconductor device
审中-公开
半导体器件的制造方法和半导体器件的制造装置
- 专利标题： Manufacturing method for semiconductor device and manufacturing device of semiconductor device
- 专利标题（中）： 半导体器件的制造方法和半导体器件的制造装置
-
申请号： US12217202申请日： 2008-07-01
-
公开(公告)号： US20090017621A1公开(公告)日： 2009-01-15
- 发明人: Takuji Sako , Kaoru Maekawa
- 申请人： Takuji Sako , Kaoru Maekawa
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 优先权： JPJP2007-176004 20070704
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/67
摘要：
The semiconductor manufacturing method includes the step (ST.1) of preparing a semiconductor substrate with a copper or copper-containing metal film exposed on a surface, step (ST.2) of depositing on the copper or copper-containing metal film a metal film consisting essentially of any one of CoWB, CoWP, or W; step (ST.3) of introducing Si into the above-described metal film, and step (ST.4) of nitriding the metal film introduced with Si.
信息查询
IPC分类:
