The present invention is a method for manufacturing a solar cell by forming a p-n junction in a semiconductor substrate having a first conductivity type, wherein, at least: a first coating material containing a dopant and an agent for preventing a dopant from scattering, and a second coating material containing a dopant, are coated on the semiconductor substrate having the first conductivity type so that the second coating material may be brought into contact with at least the first coating material; and, a first diffusion layer formed by coating the first coating material, and a second diffusion layer formed by coating the second coating material the second diffusion layer having a conductivity is lower than that of the first diffusion layer are simultaneously formed by a diffusion heat treatment; a solar cell manufactured by the method; and a method for manufacturing a semiconductor device. It is therefore possible to provide the method for manufacturing the solar cell, which can manufacture the solar cell whose photoelectric conversion efficiency is improved at low cost and with a simple and easy method by suppressing surface recombination in a portion other than an electrode of a light-receiving surface and recombination within an emitter while obtaining ohmic contact; the solar cell manufactured by the method; and the method for manufacturing the semiconductor device.