- 专利标题： Bipolar transistors with vertical structures
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申请号： US12286239申请日： 2008-09-29
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公开(公告)号： US20090029536A1公开(公告)日： 2009-01-29
- 发明人: Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
- 申请人： Young-Kai Chen , Lay-Lay Chua , Vincent Etienne Houtsma , Rose Fasano Kopf , Andreas Leven , Chun-Ting Liu , Wei-Jer Sung , Yang Yang
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
公开/授权文献
- US07595249B2 Bipolar transistors with vertical structures 公开/授权日：2009-09-29
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