摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.
摘要:
Apparatus including: a substrate layer having a substantially planar top surface; an optically conductive peak located and elongated on, and spanning a first thickness measured in a direction generally away from, the top surface; the optically conductive peak having first and second lateral walls each including distal and proximal lateral wall portions, the proximal lateral wall portions intersecting the top surface; and first and second sidewall layers located on the distal lateral wall portions, the sidewall layers not intersecting the top surface and spanning a second thickness that is less than the first thickness measured in the same direction.
摘要:
A signal receiver, such as an RF-matched filter receiver, includes an optical source (e.g. a mode-locked laser) providing an optical signal, and a first optical modulator to modulate the optical signal with a received RF signal and provide a modulated optical signal. A second optical modulator modulates the modulated optical signal with a reference signal and provides a twice modulated optical signal. The modulators may be Mach-Zehnder Modulators (MZM) and/or Indium Phosphide (InP) modulators. An optical detector receives the twice modulated optical signal and provides a detected signal, and a processing unit receives the detected signal and extracts or measures cross-correlation between the received RF signal and the reference signal.
摘要:
A method is provided for identifying a contaminant in a gaseous space. The method includes: generating a broadband optical waveform; shaping the optical waveform to match an expected waveform for a known contaminant; and transmitting the shaped optical waveform towards an unknown contaminant. Upon receiving a reflected optical waveform from the unknown contaminant, determining whether the unknown contaminant correlates to the known contaminant based on the reflected waveform.
摘要:
An apparatus having a topology that allows building complicated optical programmable arrays useful for manipulating the phase and/or amplitude of an optical signal. Sophisticated filtering and other optical signal processing functionality can be programmed into the array after a chip containing the array has been fabricated. This programming capability is analogous to that of electronic field programmable gate arrays (FPGA's). Apparatus described herein will provide a powerful tool for processing optical signals or very broadband electrical signals.
摘要:
A driver, e.g., for use with electro-optic (E/O) modulators. The driver is configured to generate a driving signal based on an electronic NRZ input data signal and an input clock signal. The driver converts the NRZ input data signal to an RZ format and produces an amplified RZ signal that can be applied to an E/O modulator. The amplification gain of the driver is adjustable to enable interfacing with different modulators. In one embodiment of the invention, the driving signal is generated based on a comparison between the NRZ input data signal and an offset clock signal generated from the input clock signal. The width of pulses in the driving signal, e.g., corresponding to logical “ones,” may be tuned by, e.g., changing the DC offset of the clock signal. The driver may be implemented as an ASIC configured to operate at the data rate of, e.g., 10 GBit/s.