发明申请
- 专利标题: Differential magnetoresistive magnetic head
- 专利标题(中): 差分磁阻磁头
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申请号: US12218860申请日: 2008-07-17
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公开(公告)号: US20090034135A1公开(公告)日: 2009-02-05
- 发明人: Hiroyuki Hoshiya , Kenichi Meguro , Katsumi Hoshino , Yo Sato , Hiroyuki Katada , Kazuhiro Nakamoto
- 申请人: Hiroyuki Hoshiya , Kenichi Meguro , Katsumi Hoshino , Yo Sato , Hiroyuki Katada , Kazuhiro Nakamoto
- 申请人地址: NL Netherlands
- 专利权人: Hitachi Global Storage Technologies
- 当前专利权人: Hitachi Global Storage Technologies
- 当前专利权人地址: NL Netherlands
- 优先权: JP2007-189631 20070720
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.
公开/授权文献
- US08174799B2 Differential magnetoresistive magnetic head 公开/授权日:2012-05-08
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