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    Magnetic head and manufacturing method thereof
    1.
    发明授权
    Magnetic head and manufacturing method thereof 有权
    磁头及其制造方法

    公开(公告)号：US08149548B2

    公开(公告)日：2012-04-03

    申请号：US12386458

    申请日：2009-04-17

    申请人： Masahiko Hatatani ,  Katsuro Watanabe ,  Nubuo Yoshida ,  Katsumi Hoshino

    发明人： Masahiko Hatatani ,  Katsuro Watanabe ,  Nubuo Yoshida ,  Katsumi Hoshino

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

    摘要： Embodiments of the present invention provide a magnetic head having a read head of stable reading operation and with less magnetic fluctuation noise. According to one embodiment, a free layer has a structure comprising two ferromagnetic layers (a first free layer and a second free layer) that are coupled anti-ferromagnetically by way of a non-magnetic intermediate layer, in which the magnetization amount of the first free layer is set to larger than the magnetization amount of the second free layer. Further, the magnetic domains in the first free layer and the second free layer are stabilized simultaneously by increasing the distance between the second free layer and the magnetic domain control film to be more than the distance between the first free layer and the magnetic domain control film, thereby adjusting the magnetization amount of the magnetic domain control film. Further, the volume of the entire free layer is increased thereby greatly decreasing the magnetic fluctuation noises, to obtain a read head showing a high SN ratio.

    摘要翻译： 本发明的实施例提供了一种具有稳定读取操作的读取头并具有较小的磁波动噪声的磁头。 根据一个实施例，自由层具有包括通过非磁性中间层反铁磁耦合的两个铁磁层（第一自由层和第二自由层）的结构，其中第一 自由层被设定为大于第二自由层的磁化量。 此外，第一自由层和第二自由层中的磁畴通过将第二自由层和磁畴控制膜之间的距离增大到第一自由层和磁畴控制膜之间的距离而同时稳定 从而调整磁畴控制膜的磁化量。 此外，整个自由层的体积增加，从而大大降低磁波动噪声，以获得显示高SN比的读头。

    Magnetoresistive Magnetic Head
    3.
    发明申请
    Magnetoresistive Magnetic Head 有权
    磁阻磁头

    公开(公告)号：US20100188771A1

    公开(公告)日：2010-07-29

    申请号：US12636649

    申请日：2009-12-11

    申请人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    发明人： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

    IPC分类号： G11B21/02 ,  G11B5/39

    CPC分类号： H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

    摘要： A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

    摘要翻译： 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same
    4.
    发明授权
    Magneto-resistive head having a stable response property without longitudinal biasing and method for manufacturing the same 失效
    具有稳定的响应特性而不具有纵向偏置的磁阻头及其制造方法

    公开(公告)号：US07733614B2

    公开(公告)日：2010-06-08

    申请号：US11698251

    申请日：2007-01-24

    申请人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/127

    CPC分类号： G11B5/399 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/12

    摘要： Embodiments in accordance with the present invention provide a method of manufacturing a magneto-resistive head which can realize high sensitivity and good linear response characteristics with low noise even if a track width becomes narrower. A uniaxial anisotropy unaffected by annealing which is due to the orientation of the crystal grain growth direction, is induced in a magnetic layer. The free magnetic layer has the synthetic antiferromagnetic construction: first magnetic layer/interlayer antiferromagnetic coupling layer/second magnetic layer, the magnitude of the antiferromagnetic coupling is adjusted, and linear response characteristics are obtained even if a longitudinal biasing field applying mechanism is not provided.

    摘要翻译： 根据本发明的实施例提供一种制造磁阻头的方法，即使轨道宽度变窄，其也可以实现具有低噪声的高灵敏度和良好的线性响应特性。 在磁性层中诱发不受退火影响的单轴各向异性，这是由于晶粒生长方向的取向引起的。 自由磁性层具有合成的反铁磁结构：第一磁性层/层间反铁磁耦合层/第二磁性层，调整反铁磁耦合的大小，并且即使没有提供纵向偏置场施加机构也可获得线性响应特性。

    Differential magnetoresistive magnetic head
    5.
    发明申请
    Differential magnetoresistive magnetic head 有权
    差分磁阻磁头

    公开(公告)号：US20090034135A1

    公开(公告)日：2009-02-05

    申请号：US12218860

    申请日：2008-07-17

    申请人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    发明人： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

    摘要翻译： 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。

    Magnetoresistive head, magnetic storage apparatus and method of manufacturing a magnetic head
    6.
    发明申请
    Magnetoresistive head, magnetic storage apparatus and method of manufacturing a magnetic head 有权
    磁阻磁头，磁存储装置以及制造磁头的方法

    公开(公告)号：US20080144231A1

    公开(公告)日：2008-06-19

    申请号：US11998623

    申请日：2007-11-29

    申请人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    发明人： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  Y10T29/49826

    摘要： Embodiments of the present invention provide a magnetic head incorporating a CPP-GMR device having a high output at a suitable resistance. According to one embodiment, in a Current Perpendicular to Plane-Giant Magneto Resistive (CPP-GMR) head comprising a pinned layer, a free layer, and a current screen layer for confining current therein, a planarization treatment is applied to the surface of the current screen layer, thereby allowing the current screen layer to have a fluctuation in film thickness thereof. As a result of the fluctuation being provided in the film thickness of the current screen layer, parts of the current screen layer, smaller in the film thickness, will be selectively turned into metal areas low in resistance, and as the metal areas low in resistance serve as current paths, effects of confining current can be adjusted by controlling the fluctuation in the film thickness.

    摘要翻译： 本发明的实施例提供一种结合具有适当电阻的高输出的CPP-GMR器件的磁头。 根据一个实施例，在垂直于平面大磁阻（CPP-GMR）头的电流包括被钉扎层，自由层和用于限制其中的电流的当前屏幕层，平坦化处理被施加到 当前的屏幕层，从而允许当前的屏幕层具有其膜厚度的波动。 由于在当前的屏幕层的膜厚度上提供了波动的结果，当前屏幕层的薄膜厚度的部分将被选择性地变成金属区域的低电阻，并且由于金属区域的电阻低 作为电流路径，可以通过控制膜厚度的波动来调节限流电流的影响。

    Magnetic head and a magnetic storage apparatus
    7.
    发明申请
    Magnetic head and a magnetic storage apparatus 有权
    磁头和磁存储装置

    公开(公告)号：US20070297097A1

    公开(公告)日：2007-12-27

    申请号：US11807744

    申请日：2007-05-29

    申请人： Katsuro Watanabe ,  Katsumi Hoshino ,  Masafumi Mochizuki

    发明人： Katsuro Watanabe ,  Katsumi Hoshino ,  Masafumi Mochizuki

    IPC分类号： G11B5/11

    CPC分类号： G11B5/1278 ,  G11B5/3967

    摘要： Embodiments in accordance with the present invention provide a magnetic head of the CPP structure for perpendicular magnetic recording, that is excellent in read performance, and stable in write/read performances by enhancing the external field durability, and further, suppresses deterioration in read sensor property, due to thermal factors. At least either shield layer of a lower magnetic shield layer, and an upper magnetic shield layer, closer to a perpendicular magnetic write head, is made up so as to have a multi-layered structure comprising low thermal expansion nonmagnetic layers, and magnetic layers. Material having a coefficient of thermal expansion smaller than that of a magnetoresistive film is selected as a material for the low thermal expansion nonmagnetic layers of the shield layer.

    摘要翻译： 根据本发明的实施例提供了一种用于垂直磁记录的CPP结构的磁头，其读取性能优异，并且通过增强外部场强耐久性而在写入/读取性能方面稳定，并且还抑制读取传感器性能的劣化 ，由于热因素。 下磁屏蔽层的至少一个屏蔽层和更靠近垂直磁写头的上磁屏蔽层被制成具有包括低热膨胀非磁性层和磁性层的多层结构。 选择热膨胀系数小于磁阻膜的材料作为屏蔽层的低热膨胀非磁性层的材料。

    Magnetoresistive head and magnetic storage apparatus
    9.
    发明授权
    Magnetoresistive head and magnetic storage apparatus 失效
    磁阻磁头和磁存储装置

    公开(公告)号：US06515837B1

    公开(公告)日：2003-02-04

    申请号：US09662643

    申请日：2000-09-15

    申请人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    发明人： Yoshihiro Hamakawa ,  Shiroyasu Odai ,  Katsumi Hoshino

    IPC分类号： G11B539

    CPC分类号： G11B5/3903 ,  G11B5/3109 ,  G11B5/3133 ,  G11B5/3146

    摘要： There is provided a magnetoresistive head which is capable of suppressing the fluctuation of read output while ensuring a sufficient dielectric breakdown voltage of the shielding portions by constituting the shielding portions with a Co-based material. Namely, the lower shield film is formed of a 2-ply composite film wherein the film (12′) of the lower shield film which is disposed contacting with the lower gap insulation film (13) is constituted by an amorphous soft magnetic film, while the film (12) which is disposed away from the lower gap insulation film is constituted by a crystalline soft magnetic film, thereby making it possible to suppress the fluctuation of read output even if the gap is narrowed without deteriorating the yield relative to the dielectric breakdown.

    摘要翻译： 提供了一种磁阻头，其能够通过用Co基材料构成屏蔽部分来确保屏蔽部分的足够的介电击穿电压，从而抑制读取输出的波动。 也就是说，下屏蔽膜由2层复合膜形成，其中下屏蔽膜的与下间隙绝缘膜（13）接触的膜（12'）由非晶软磁膜构成，而 离开下间隔绝缘膜设置的膜（12）由结晶软磁膜构成，从而即使间隙变窄而不会使相对于介质击穿的屈服劣化也可以抑制读取输出的波动 。