发明申请
- 专利标题: MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUANTUM WELLS
- 专利标题(中): 具有量子阱的活跃区域的迁移增强外延制造
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申请号: US12250405申请日: 2008-10-13
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公开(公告)号: US20090034571A1公开(公告)日: 2009-02-05
- 发明人: Ralph H. Johnson
- 申请人: Ralph H. Johnson
- 申请人地址: US CA Sunnyvale
- 专利权人: FINISAR CORPORATION
- 当前专利权人: FINISAR CORPORATION
- 当前专利权人地址: US CA Sunnyvale
- 主分类号: H01S5/183
- IPC分类号: H01S5/183 ; H01S5/026
摘要:
Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.