发明申请
US20090039434A1 Simple Low Power Circuit Structure with Metal Gate and High-k Dielectric
有权
具有金属栅极和高k介质的简单低功耗电路结构
- 专利标题： Simple Low Power Circuit Structure with Metal Gate and High-k Dielectric
- 专利标题（中）： 具有金属栅极和高k介质的简单低功耗电路结构
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申请号： US11835310申请日： 2007-08-07
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公开(公告)号： US20090039434A1公开(公告)日： 2009-02-12
- 发明人: Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri
- 申请人： Bruce B. Doris , Eduard Albert Cartier , Barry Paul Linder , Vijay Narayanan , Vamsi Paruchuri
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238
摘要：
FET device structures are disclosed with the PFET and NFET devices having high-k dielectric gate insulators and metal containing gates. The metal layers of the gates in both the NFET and PFET devices have been fabricated from a single common metal layer. Due to the single common metal, device fabrication is simplified, requiring a reduced number of masks. Also, as a further consequence of using a single layer of metal for the gates of both type of devices, the terminal electrodes of NFETs and PFETs can be butted to each other in direct physical contact. Device thresholds are adjusted by the choice of the common metal material and oxygen exposure of the high-k dielectric. Threshold values are aimed for low power consumption device operation.
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