发明申请
- 专利标题： Apparatus and Method for Manufacturing Semiconductor
- 专利标题（中）： 半导体制造装置及方法
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申请号： US12089029申请日： 2006-04-24
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公开(公告)号： US20090039475A1公开(公告)日： 2009-02-12
- 发明人: Yoshimi Shioya
- 申请人： Yoshimi Shioya
- 优先权： JP2005-299971 20051014
- 国际申请： PCT/JP2006/308544 WO 20060424
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; G21G5/00 ; C23C16/00
摘要：
To provide a semiconductor manufacturing apparatus which is able to improve insulation film.An irradiating device comprises irradiating means for irradiating light with a wavelength longer than one corresponding to the absorption edge of insulation film for said insulation film and shorter than one necessary for cutting chemical bonds, to which hydrogen of said insulation film is related.
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