发明申请
- 专利标题: NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
- 专利标题(中): 非易失性存储器件及其制造方法
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申请号: US12108465申请日: 2008-04-23
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公开(公告)号: US20090040805A1公开(公告)日: 2009-02-12
- 发明人: Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
- 申请人: Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
- 申请人地址: KR Ichon-shi
- 专利权人: Hynix Semiconductor Inc.
- 当前专利权人: Hynix Semiconductor Inc.
- 当前专利权人地址: KR Ichon-shi
- 优先权: KR10-2007-0040519 20070425; KR10-2008-0034118 20080414
- 主分类号: G11C13/04
- IPC分类号: G11C13/04 ; H01L51/40
摘要:
A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.