发明申请
US20090040849A1 SEMICONDUCTOR MEMORY, TEST METHOD OF SEMICONDUCTOR MEMORY AND SYSTEM 失效
半导体存储器,半导体存储器和系统的测试方法

SEMICONDUCTOR MEMORY, TEST METHOD OF SEMICONDUCTOR MEMORY AND SYSTEM
摘要:
Each program circuit outputs an operating specification signal indicating a first or second operating specification according to a program state. Each specification changing circuit is set by a corresponding block selection signal and outputs an operating specification signal indicating a second operating specification. Each timing control circuit changes an output timing of a precharge control signal for a bit line according to the operating specification signal. By the operating specification signal from the specification changing circuit, a failure can be detected in each memory block before programming a program circuit. Thereafter, the failure can be relieved by the program circuit. The output timing of the precharge control signal can be set for each memory block by a block selection signal without wiring a dedicated signal line for setting each specification changing circuit. Accordingly, increase in chip size can be minimized.
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