摘要:
Each program circuit outputs an operating specification signal indicating a first or second operating specification according to a program state. Each specification changing circuit is set by a corresponding block selection signal and outputs an operating specification signal indicating a second operating specification. Each timing control circuit changes an output timing of a precharge control signal for a bit line according to the operating specification signal. By the operating specification signal from the specification changing circuit, a failure can be detected in each memory block before programming a program circuit. Thereafter, the failure can be relieved by the program circuit. The output timing of the precharge control signal can be set for each memory block by a block selection signal without wiring a dedicated signal line for setting each specification changing circuit. Accordingly, increase in chip size can be minimized.
摘要:
A semiconductor memory and a refresh cycle control method that reduce a standby current by properly changing a refresh cycle according to the temperature of the semiconductor memory. A temperature detection section detects the temperature of the semiconductor memory. A cycle change control section sends a cycle change signal for changing a refresh cycle when the temperature of the semiconductor memory reaches a predetermined cycle change temperature. A refresh timing signal generation section generates a refresh timing signal and changes the cycle of the refresh timing signal in response to the cycle change signal. A constant current generation circuit generates an electric current for generating the refresh timing signal. A low-temperature constant current setting circuit designates the level of the electric current generated in the case that the temperature of the semiconductor memory is lower than or equal to the cycle change temperature. A high-temperature constant current setting circuit designates the level of the electric current generated in the case that the temperature of the semiconductor memory is higher than the cycle change temperature.
摘要:
A magnetic memory is composed of: a magnetoresistance element including a free magnetic layer; a first interconnection extending in a first direction obliquely to an easy axis of the free magnetic layer; a second interconnection extending in a second direction substantially orthogonal to the first direction; and a write circuit writing data into the free magnetic layer through developing a first write current on the first interconnection, and then developing a second write current on the second interconnection with the first write current turned on. The free magnetic layer includes: first to N-th ferromagnetic layers and first to (N−1)-th non-magnetic layers with N being equal to or more than 4, the i-th non-magnetic layer being disposed between the i-th and (i+1)-th ferromagnetic layers with i being any of natural numbers equal to or less than N−1. The free magnetic layer is designed so that antiferromagnetic coupling(s) between the j-th and (j+1)-th ferromagnetic layers is stronger than that between the first and second ferromagnetic layers, j being any of integers ranging from 2 to N−2.
摘要:
A plurality of switching transistors is provided, each connects power supply terminals of a plurality of first circuit blocks to a power supply line, respectively. Among the first circuit blocks, the power supply terminals of the first circuit blocks operating at different timings are connected by an internal power supply line. A power supply control circuit simultaneously turns on the switching transistors connected to the internal power supply line, in response to operation(s) of at least any one of the first circuit blocks connected to the internal power supply line. Since the switching transistors can be shared among the first circuit blocks not operating simultaneously, operation speed of the first circuit blocks can be increased. Since a total size of the switching transistors can be made small, standby current can be decreased. Accordingly, a semiconductor integrated circuit operating at a high speed can be constituted without increasing the standby current.
摘要:
A semiconductor memory device includes a data buffer for inputting/outputting data from/to an exterior of the device, a plurality of DRAM cell array blocks, an SRAM redundancy cell which is situated around each of the plurality of DRAM cell array blocks, a fuse circuit which stores therein an address of a defect memory cell in the DRAM cell array blocks, a comparison circuit which compares an input address with the address stored in the fuse circuit, and an I/O bus which couple the SRAM redundancy cell to the data buffer in response to an address match found by the comparison circuit.
摘要:
A semiconductor device includes a word line drive circuit resetting the word line by driving the word line connected to a memory cell and switching a reset level of the word line drive circuit at the time of the reset operation of the word line. Further, a semiconductor device includes a memory cell array formed by arranging a plurality of memory cells and a reset level switch circuit for selecting a first potential or a second potential and supplying the first potential or the second potential to the word line drive circuit.
摘要:
A semiconductor integrated circuit having an active mode and a standby mode includes a node at which an internal circuit is connected to a latch circuit, the latch circuit storing a data signal output from the internal circuit. A level determination unit determines a logic level of the node in response to a control signal indicating the standby mode.
摘要:
The invention provides N-acyl-N-phenylmaleamic acid derivatives represented by the general formula I!, a method of producing the same, and a herbicide containing the same as the effective components, ##STR1## wherein X and Y each individually represent hydrogen atoms or halogen atoms, R.sup.1 represents a hydrogen atom, a halogen atom, a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a lower alkoxyalkyl group or a lower alkoxycarbonylalkyl group, R.sup.2 represents a lower alkyl group, a halogenated lower alkyl group or a substituted or unsubstituted phenyl group, R.sup.3 represents a hydrogen atom or a lower alkyl group, and R.sup.4 represents a hydroxyl, a lower alkoxy group, a lower alkenyloxy group, a lower alkynyloxy group, a lower alkoxyalkoxy group, a benzyloxy group or a lower alkoxycarbonylalkoxy group. This herbicide which is very useful can be widely applied to upland, paddy field, orchard, turf, forest, non-crop land, etc., and is not harmful to crops.
摘要:
There are disclosed an N-propargyl-N-(2-trifluoromethylbenzoyl)-3-substituted benzenesulfonamide represented by the general formula: ##STR1## wherein R.sup.1 represents a halogen atom, a lower alkyl group, a lower alkoxy group, a perfluoro-lower alkyl group having 1 to 4 carbon atoms, a nitro group, a cyano group, a carboxyl group or a lower alkoxycarbonyl group; and R.sup.2 represents a hydrogen atom, a halogen atom, a lower alkyl group, a perfluoro-lower alkyl group having 1 to 4 carbon atoms, a lower alkoxy group, a nitro group, a cyano group, a carboxyl group or a lower alkoxycarbonyl group, and a selective herbicide containing the same as an active ingredient.
摘要翻译:公开了由以下通式表示的N-炔丙基-N-(2-三氟甲基苯甲酰基)-3-取代的苯磺酰胺:其中R 1表示卤素原子,低级烷基,低级烷氧基,全氟低级 具有1至4个碳原子的烷基,硝基,氰基,羧基或低级烷氧基羰基; R 2表示氢原子,卤素原子,低级烷基,碳原子数1〜4的全氟低级烷基,低级烷氧基,硝基,氰基,羧基或低级烷氧基羰基 ,以及含有与活性成分相同的选择性除草剂。
摘要:
A process for producing a resin dispersion characterized in that an ethylenically unsaturated monomer capable of forming a polymer insoluble in an aqueous medium is polymerized in a solution formed by dissolving in said aqueous medium a water-soluble polymer derived from(1) 10-90% by weight of a hydroxyalkyl (meth-)acrylate expressed by the following general formula ##STR1## wherein R is a hydrogen atom or a methyl group, and l is an integer of 2, 3 or 4,(2) 10-90% by weight of a polyalkyleneglycol mono (meth-)acrylate expressed by the following general formula ##STR2## wherein R is a hydrogen atom or a methyl group, m is an integer of 2 or 3, and n is an integer of 2 to 20, and(3) 0-30% by weight of another ethylenically unsaturated monomer.