发明申请
- 专利标题: DATA WRITING METHOD FOR FLASH MEMORIES
- 专利标题(中): 闪存存储器的数据写入方法
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申请号: US11839255申请日: 2007-08-15
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公开(公告)号: US20090046516A1公开(公告)日: 2009-02-19
- 发明人: Chih-Hao Ho , Cheng-Ming Yih
- 申请人: Chih-Hao Ho , Cheng-Ming Yih
- 申请人地址: TW Hsinchu
- 专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人: MACRONIX INTERNATIONAL CO., LTD.
- 当前专利权人地址: TW Hsinchu
- 主分类号: G11C11/34
- IPC分类号: G11C11/34
摘要:
A data writing method for flash memories suitable for a flash memory using a switching unit to control a bit line thereof is disclosed. The data writing method for flash memories includes applying a square wave signal to a word line of the flash memory and applying a descent wave signal to the switching unit for the bit line of the flash memory to receive a fixed drain voltage.
公开/授权文献
- US07616479B2 Data writing method for flash memories 公开/授权日:2009-11-10
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