发明申请
- 专利标题： Reduced Residual Formation in Etched Multi-Layer Stacks
- 专利标题（中）： 蚀刻多层堆叠中残留形成的减少
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申请号： US12196959申请日： 2008-08-22
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公开(公告)号： US20090053535A1公开(公告)日： 2009-02-26
- 发明人: Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
- 申请人： Frank Y. Xu , Weijun Liu , Cynthia B. Brooks , Dwayne L. LaBrake , David J. Lentz
- 申请人地址： US TX Austin
- 专利权人： Molecular Imprints, Inc.
- 当前专利权人： Molecular Imprints, Inc.
- 当前专利权人地址： US TX Austin
- 主分类号： B32B27/00
- IPC分类号： B32B27/00 ; C08F2/46 ; B05D3/00 ; B44C1/22
摘要：
A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.
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