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公开(公告)号：US20090053535A1
公开(公告)日：2009-02-26
申请号：US12196959
申请日：2008-08-22
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24612
摘要： A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.
摘要翻译： 通过将第一可聚合组合物施加到基底上，聚合第一可聚合组合物以形成第一聚合层，向第一聚合层施加第二可聚合组合物，并将第二可聚合组合物聚合成 在第一聚合层上形成第二聚合层。 第一可聚合组合物包括玻璃化转变温度低于约25℃的可聚合组分，并且第一聚合层对于第二可聚合组合物基本上是不可渗透的。
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公开(公告)号：US20120288686A1
公开(公告)日：2012-11-15
申请号：US13546622
申请日：2012-07-11
IPC分类号： B32B3/30 , B05D3/10 , B05D1/38 , C08F236/20 , B32B27/08
CPC分类号： G03F7/027 , B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10T428/24612
摘要： A multi-layer stack for imprint lithography is formed by applying a first polymerizable composition to a substrate, polymerizing the first polymerizable composition to form a first polymerized layer, applying a second polymerizable composition to the first polymerized layer, and polymerizing the second polymerizable composition to form a second polymerized layer on the first polymerized layer. The first polymerizable composition includes a polymerizable component with a glass transition temperature less than about 25° C., and the first polymerized layer is substantially impermeable to the second polymerizable composition.
摘要翻译： 通过将第一可聚合组合物施加到基底上，聚合第一可聚合组合物以形成第一聚合层，向第一聚合层施加第二可聚合组合物，并将第二可聚合组合物聚合成 在第一聚合层上形成第二聚合层。 第一可聚合组合物包括玻璃化转变温度低于约25℃的可聚合组分，并且第一聚合层对于第二可聚合组合物基本上是不可渗透的。
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公开(公告)号：US20120187085A1
公开(公告)日：2012-07-26
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： B44C1/22
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US08545709B2
公开(公告)日：2013-10-01
申请号：US13441500
申请日：2012-04-06
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US20090212012A1
公开(公告)日：2009-08-27
申请号：US12392685
申请日：2009-02-25
申请人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
发明人： Cynthia B. Brooks , Dwayne L. LaBrake , Niyaz Khusnatdinov , Michael N. Miller , Sidlgata V. Sreenivasan , David James Lentz , Frank Y. Xu
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.
摘要翻译： 可以改变残余层的厚度以控制由压印光刻工艺提供的图案化层中的特征的临界尺寸。 残余层的厚度可以与特征的临界尺寸成正比或成反比。 分配技术和材料选择也可以提供图案化层中特征的临界尺寸的控制。
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公开(公告)号：US08529778B2
公开(公告)日：2013-09-10
申请号：US12616896
申请日：2009-11-12
IPC分类号： B44C1/22
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译： 描述了形成纳米形图案的方法。 该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。
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公开(公告)号：US08361546B2
公开(公告)日：2013-01-29
申请号：US12606588
申请日：2009-10-27
IPC分类号： B05D5/10
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01J37/32431 , Y10T428/30 , Y10T428/31663
摘要： Systems and methods for adhering a substrate to a patterned layer are described. Included are in situ cleaning and conditioning of the substrate, and the application of an adhesion layer between the substrate and the patterned layer, as well as forming an intermediate layer between adhesion materials and the substrate.
摘要翻译： 描述了将基板粘合到图案层上的系统和方法。 包括基材的原位清洁和调理，以及在基材和图案化层之间施加粘合层，以及在粘合材料和基材之间形成中间层。
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公开(公告)号：US20100120251A1
公开(公告)日：2010-05-13
申请号：US12616896
申请日：2009-11-12
IPC分类号： H01L21/302
CPC分类号： G03F7/0035 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： Methods for creating nano-shaped patterns are described. This approach may be used to directly pattern substrates and/or create imprint lithography molds that may be subsequently used to directly replicate nano-shaped patterns into other substrates in a high throughput process.
摘要翻译： 描述了形成纳米形图案的方法。 该方法可以用于直接图案化基底和/或产生压印光刻模具，其可以随后用于在高通量过程中将纳米形图案直接复制到其它基底中。
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公开(公告)号：US20120189780A1
公开(公告)日：2012-07-26
申请号：US13429903
申请日：2012-03-26
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm.
摘要翻译： 描述了在基板上制造图案化表面的方法。 通常，图案化表面由厚度小于约5nm的残余层限定。
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公开(公告)号：US20090148619A1
公开(公告)日：2009-06-11
申请号：US12328498
申请日：2008-12-04
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Methods for manufacturing a patterned surface on a substrate are described. Generally, the patterned surface is defined by a residual layer having a thickness of less than approximately 5 nm.
摘要翻译： 描述了在基板上制造图案化表面的方法。 通常，图案化表面由厚度小于约5nm的残余层限定。
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