发明申请
- 专利标题： Pattern producing method, semiconductor device manufacturing method and program
- 专利标题（中）： 图案生产方法，半导体器件制造方法和程序
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申请号： US11892764申请日： 2007-08-27
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公开(公告)号： US20090053619A1公开(公告)日： 2009-02-26
- 发明人: Shimon Maeda , Koujirou Ohyoshi
- 申请人： Shimon Maeda , Koujirou Ohyoshi
- 优先权： JP2006-231142 20060828
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F7/20
摘要：
A pattern producing method includes specifying a first pattern and a second pattern obtained by modifying the first pattern, specifying a correction area based on the second pattern, in a part of an area including the first pattern and the second pattern, producing at least a part of the first pattern, which is included in the correction area, as a correction target pattern, producing a part of the first or second pattern, which is not included in the correction area, as a correction reference pattern, correcting the correction target pattern on the basis of the correction target pattern and the correction reference pattern, and producing a pattern based on the corrected correction target pattern and the second pattern.
公开/授权文献
- US07752595B2 Method for verifying and correcting post-OPC pattern layout 公开/授权日：2010-07-06
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