发明申请
- 专利标题： METHOD OF PATTERN FORMATION IN SEMICONDUCTOR FABRICATION
- 专利标题（中）： 半导体制造中图案形成的方法
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申请号： US11841485申请日： 2007-08-20
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公开(公告)号： US20090053899A1公开(公告)日： 2009-02-26
- 发明人: George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
- 申请人： George Liu , Kuei Shun Chen , Vencent Chang , Shang-Wen Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; G03C5/00
摘要：
Provided is a method of fabricating a semiconductor device. The method includes providing a substrate, forming a photo acid generator (PAG) layer on the substrate, exposing the PAG layer to radiation, and forming a photoresist layer on the exposed PAG layer. The exposed PAG layer generates an acid. The acid decomposes a portion of the formed photoresist layer. In one embodiment, the PAG layer includes organic BARC. The decomposed portion of the photoresist layer may be used as a masking element.
公开/授权文献
- US07648918B2 Method of pattern formation in semiconductor fabrication 公开/授权日：2010-01-19
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