发明申请
- 专利标题： MUGFET WITH OPTIMIZED FILL STRUCTURES
- 专利标题（中）： 具有优化填充结构的MUGFET
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申请号： US11846825申请日： 2007-08-29
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公开(公告)号： US20090057781A1公开(公告)日： 2009-03-05
- 发明人: Brent Anderson , Andres Bryant , Edward J. Nowak
- 申请人： Brent Anderson , Andres Bryant , Edward J. Nowak
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L29/76
摘要：
A semiconductor structure includes active multi-gate fin-type field effect transistor (MUGFET) structures and inactive MUGFET fill structures between the active MUGFET structures. The active MUGFET structures comprise transistors that change conductivity depending upon voltages within gates of the active MUGFET structures. Conversely, the inactive MUGFET fill structures comprise passive devices that do not change conductivity irrespective of voltages within gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures are parallel to the gates of the inactive MUGFET fill structures, and the fins of the active MUGFET structures are the same size as the fins of the inactive MUGFET fill structures. The active MUGFET structures have the same pitch as the gates of the inactive MUGFET fill structures. The gates of the active MUGFET structures comprise active doping agents, but the inactive MUGFET fill structures do not contain the active doping agents.
公开/授权文献
- US07888736B2 MUGFET with optimized fill structures 公开/授权日：2011-02-15
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