发明申请
- 专利标题： VAPOR DEPOSITION SYSTEM AND VAPOR DEPOSITION METHOD
- 专利标题（中）： 蒸气沉积系统和蒸气沉积方法
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申请号： US12193612申请日： 2008-08-18
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公开(公告)号： US20090061084A1公开(公告)日： 2009-03-05
- 发明人: Takahide Onuma , Nobutaka Ukigaya , Takehiko Soda , Kiyoshi Kuramochi , Tomokazu Sushihara , Naohiro Nakane
- 申请人： Takahide Onuma , Nobutaka Ukigaya , Takehiko Soda , Kiyoshi Kuramochi , Tomokazu Sushihara , Naohiro Nakane
- 申请人地址： JP Tokyo
- 专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人： CANON KABUSHIKI KAISHA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-227408 20070903
- 主分类号： C23C16/00
- IPC分类号： C23C16/00
摘要：
In a vapor deposition method of forming a film of an organic compound on a substrate, a material containing portion filled with a vapor deposition material is heated, to thereby evaporate or sublimate the vapor deposition material and discharge the vapor deposition material to a film formation space of a vacuum chamber through a plurality of pipings connected to the material containing portion, and a piping having a smaller conductance among the pipings having different conductances is provided with a flow rate adjusting mechanism for controlling an amount of the vapor deposition material released into the vacuum chamber, whereby a film formation speed can be adjusted finely.
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