公开(公告)号：US20090061084A1

公开(公告)日：2009-03-05

申请号：US12193612

申请日：2008-08-18

申请人： Takahide Onuma ,  Nobutaka Ukigaya ,  Takehiko Soda ,  Kiyoshi Kuramochi ,  Tomokazu Sushihara ,  Naohiro Nakane

发明人： Takahide Onuma ,  Nobutaka Ukigaya ,  Takehiko Soda ,  Kiyoshi Kuramochi ,  Tomokazu Sushihara ,  Naohiro Nakane

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/12

摘要： In a vapor deposition method of forming a film of an organic compound on a substrate, a material containing portion filled with a vapor deposition material is heated, to thereby evaporate or sublimate the vapor deposition material and discharge the vapor deposition material to a film formation space of a vacuum chamber through a plurality of pipings connected to the material containing portion, and a piping having a smaller conductance among the pipings having different conductances is provided with a flow rate adjusting mechanism for controlling an amount of the vapor deposition material released into the vacuum chamber, whereby a film formation speed can be adjusted finely.

摘要翻译： 在基板上形成有机化合物膜的气相沉积方法中，加热填充有气相沉积材料的材料含有部分，从而使气相沉积材料蒸发或升华，并将蒸镀材料排出到成膜空间 通过连接到材料容纳部分的多个管道连接真空室，并且在具有不同电导率的管道中具有较小电导的管道设置有用于控制释放到真空中的蒸镀材料的量的流量调节机构 从而可以精细地调节成膜速度。

公开(公告)号：US20120103254A1

公开(公告)日：2012-05-03

申请号：US13280895

申请日：2011-10-25

申请人： Tomokazu Sushihara

发明人： Tomokazu Sushihara

IPC分类号： B05C13/00 ,  B05C11/00

CPC分类号： C23C14/042 ,  C23C14/566 ,  C23C14/568 ,  H01L51/56

摘要： Provided is thin-film formation system including: a first conveying mechanism to convey a substrate and a deposition mask to a substrate carry-in position; a second conveying mechanism to convey the substrate and the deposition mask aligned by an alignment mechanism placed at the substrate carry-in position; a film formation mechanism to laminate a layer of organic material on the substrate in a film formation interval of the second conveying mechanism; and a third conveying mechanism to convey the substrate and the deposition mask which have passed the film formation interval from a carry-out position, in which at least one of the first conveying mechanism and the third conveying mechanism is placed parallel to the second conveying mechanism.

摘要翻译： 本发明提供一种薄膜形成系统，包括：将基板和沉积掩模输送到基板搬入位置的第一输送机构; 第二输送机构，用于输送基板和沉积掩模，所述基板和所述沉积掩模由放置在所述基板输入位置的对准机构对准; 成膜机构，用于在所述第二输送机构的成膜间隔中在所述基板上层叠有机材料层; 以及第三输送机构，其将已经通过成膜间隔的基板和沉积掩模从其中至少一个第一输送机构和第三输送机构平行于第二输送机构放置的进出位置输送 。

公开(公告)号：US07582185B2

公开(公告)日：2009-09-01

申请号：US10745604

申请日：2003-12-29

申请人： Yukito Aota ,  Masahiro Kanai ,  Atsushi Koike ,  Tomokazu Sushihara

发明人： Yukito Aota ,  Masahiro Kanai ,  Atsushi Koike ,  Tomokazu Sushihara

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H05B31/26

CPC分类号： H01J37/32174 ,  H01J37/32082

摘要： A plasma-processing apparatus having a high frequency power application electrode in which plasma is generated by supplying VHF power to the high frequency power application electrode. The plasma-processing apparatus has an impedance-matching equipment comprising a capacitive element and an inductive element, which are mutually connected in series. The apparatus is arranged so that the capacitive element and the inductive element of the impedance-matching equipment are symmetrical with respect to the center of the high frequency power application electrode.

摘要翻译： 一种具有高频功率施加电极的等离子体处理装置，其中通过向高频电力施加电极提供VHF电力而产生等离子体。 等离子体处理装置具有阻抗匹配装置，其包括串联连接的电容元件和电感元件。 该装置被布置成使得阻抗匹配设备的电容元件和电感元件相对于高频功率施加电极的中心是对称的。

公开(公告)号：US06881684B2

公开(公告)日：2005-04-19

申请号：US10650710

申请日：2003-08-29

申请人： Yukito Aota ,  Masahiro Kanai ,  Atsushi Koike ,  Tomokazu Sushihara

发明人： Yukito Aota ,  Masahiro Kanai ,  Atsushi Koike ,  Tomokazu Sushihara

IPC分类号： C23C16/42 ,  C23C16/34 ,  C23C16/505 ,  C23C16/509 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  C23C16/5096 ,  H01L21/02274 ,  H01L21/3185

摘要： A plate high-frequency electrode for supplying a high-frequency power of the VHF band and a grounding electrode are disposed in opposition to each other at an interval of less than 8 mm in a vacuum vessel; at least a silane-based gas and nitrogen gas as source gases are introduced into a reaction space of the vacuum vessel, and a silicon nitride deposited film is formed with the pressure of the reaction space being kept at 40 to 133. Thereby, a silicon nitride film with good quality can be obtained.

摘要翻译： 用于提供VHF频带的高频电力的平板高频电极和接地电极在真空容器中以小于8mm的间隔彼此相对设置; 至少将作为原料气体的硅烷类气体和氮气引入真空容器的反应空间，形成氮化硅沉积膜，反应空间的压力保持在40〜133℃。由此， 可以获得质量好的氮化物膜。

公开(公告)号：US20100078113A1

公开(公告)日：2010-04-01

申请号：US12568672

申请日：2009-09-29

申请人： Tomokazu Sushihara ,  Nobutaka Ukigaya

发明人： Tomokazu Sushihara ,  Nobutaka Ukigaya

IPC分类号： B32B37/16

CPC分类号： B32B37/08 ,  B32B37/0046 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/62 ,  B32B2457/206 ,  C23C14/12 ,  Y10T156/10

摘要： A method for depositing a film includes preparing a deposition material that is purified by sublimation, solidifying the purified deposition material in an environment having a reduced water content, conveying the solidified deposition material into a film deposition chamber through an environment having a reduced water content, and depositing a film of the solidified deposition material onto a substrate in the film deposition chamber.

摘要翻译： 沉积薄膜的方法包括制备通过升华纯化的沉积材料，在具有降低的水含量的环境中固化纯化的沉积材料，通过具有降低的水含量的环境将固化的沉积材料输送到成膜室中， 以及将所述固化的沉积材料的膜沉积到所述成膜室中的基底上。