发明申请
- 专利标题: MANUFACTURING METHOD FOR LIQUID DISCHARGE HEAD SUBSTRATE
- 专利标题(中): 液体放电头基板的制造方法
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申请号: US12203681申请日: 2008-09-03
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公开(公告)号: US20090065473A1公开(公告)日: 2009-03-12
- 发明人: Satoshi Ibe , Hirokazu Komuro , Takuya Hatsui , Kazuhiro Asai , Shimpei Otaka , Hiroto Komiyama , Keisuke Kishimoto
- 申请人: Satoshi Ibe , Hirokazu Komuro , Takuya Hatsui , Kazuhiro Asai , Shimpei Otaka , Hiroto Komiyama , Keisuke Kishimoto
- 申请人地址: JP Tokyo
- 专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人: CANON KABUSHIKI KAISHA
- 当前专利权人地址: JP Tokyo
- 优先权: JP2007-231353 20070906
- 主分类号: G01D15/18
- IPC分类号: G01D15/18
摘要:
To provide a manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of: providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, using sandblasting, silicon of the silicon substrate from the inner wall of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port.
公开/授权文献
- US08091234B2 Manufacturing method for liquid discharge head substrate 公开/授权日:2012-01-10
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