公开(公告)号：US08197705B2

公开(公告)日：2012-06-12

申请号：US12203536

申请日：2008-09-03

申请人： Keisuke Kishimoto ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama

发明人： Keisuke Kishimoto ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama

IPC分类号： G01D15/00 ,  G11B5/127

CPC分类号： B41J2/1634 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629

摘要： A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an aperture being formed on one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from the aperture on the one surface, from the one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from the one surface through the aperture of the etching mask layer.

摘要翻译： 一种制造具有其中提供液体供应口的硅衬底的液体排出头的衬底的方法包括提供硅衬底，具有形成在硅衬底的一个表面上的孔的蚀刻掩模层，形成包括 通过用激光照射硅衬底，在硅衬底的内部形成非晶硅，在硅衬底的一个表面上形成凹部，该凹部具有从一个表面上的孔露出的部分的一部分的开口 并且通过在蚀刻掩模层的孔径上从一个表面形成凹部和区域的硅衬底上进行蚀刻来形成供给口。

公开(公告)号：US20090065481A1

公开(公告)日：2009-03-12

申请号：US12203536

申请日：2008-09-03

申请人： Keisuke Kishimoto ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama

发明人： Keisuke Kishimoto ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama

IPC分类号： B44C1/22

CPC分类号： B41J2/1634 ,  B41J2/1603 ,  B41J2/1628 ,  B41J2/1629

摘要： A method of manufacturing a substrate for a liquid discharge head having a silicon substrate in which a liquid supply port is provided includes providing the silicon substrate, an etching mask layer having an opening being formed on a one surface of the silicon substrate, forming a region comprising an amorphous silicon in the interior of the silicon substrate by irradiating the silicon substrate with laser light, forming a recess, which has an opening at a part of a portion exposed from said opening on said one surface, from said one surface of the silicon substrate toward the region, and forming the supply port by performing etching on the silicon substrate in which the recess and the region have been formed from said one surface through the opening of the etching mask layer.

摘要翻译： 一种制造具有其中提供液体供给口的硅基板的液体排出头的基板的方法包括：提供硅基板，在硅基板的一个表面上形成有开口的蚀刻掩模层，形成区域 在所述硅衬底的内部通过用激光照射所述硅衬底而形成非晶硅，形成在所述一个表面的所述一个表面上从所述一个表面上的所述开口露出的部分具有开口的凹部 基板朝向该区域，并且通过在通过蚀刻掩模层的开口从所述一个表面形成凹部和区域的硅基板上进行蚀刻来形成供给口。

公开(公告)号：US20090065472A1

公开(公告)日：2009-03-12

申请号：US12203612

申请日：2008-09-03

申请人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

发明人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

IPC分类号： G11B5/127

CPC分类号： B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645

摘要： To provide a manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.

摘要翻译： 为了提供一种制造方法，对于包括其中形成有液体供给口的硅基板的液体排出头基板，包括以下步骤：制备硅基板，其一面上具有开口的掩模层 已经形成，被存放; 在所述硅衬底中形成第一凹部，使得所述凹部从所述硅衬底的一个面向所述开口延伸到所述硅衬底的另一面; 通过使用掩模层经由第一凹部对基板进行湿法蚀刻来形成第二凹部; 并且在从第二凹部到另一面的方向上对硅衬底进行干蚀刻。

公开(公告)号：US20090065482A1

公开(公告)日：2009-03-12

申请号：US12203651

申请日：2008-09-03

申请人： Hiroto Komiyama ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Keisuke Kishimoto ,  Kazuhiro Asai ,  Shimpei Otaka

发明人： Hiroto Komiyama ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Keisuke Kishimoto ,  Kazuhiro Asai ,  Shimpei Otaka

IPC分类号： B44C1/22

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639

摘要： Provided is a method of manufacturing a substrate for a liquid discharge head, the substrate including a silicon substrate with a liquid supply opening formed therein, the method including: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening.

摘要翻译： 本发明提供一种液体排出头用基板的制造方法，其特征在于，具备形成有液体供给口的硅基板的基板，其特征在于，具备：在所述基板的一个表面上通过激光加工形成1个处理部; 通过在与所述一个处理部分的一部分重叠的位置处进行激光处理并且不与所述一个处理部分的另一部分重叠来扩展所述一个处理部分以形成凹部; 并且从一个表面蚀刻具有形成在其中的凹部的基板以形成液体供应​​开口。

公开(公告)号：US20090065473A1

公开(公告)日：2009-03-12

申请号：US12203681

申请日：2008-09-03

申请人： Satoshi Ibe ,  Hirokazu Komuro ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

发明人： Satoshi Ibe ,  Hirokazu Komuro ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

IPC分类号： G01D15/18

CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1645 ,  Y10T29/49401

摘要： To provide a manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of: providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, using sandblasting, silicon of the silicon substrate from the inner wall of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port.

摘要翻译： 为了提供一种制造方法，对于液体排出头，其包括形成有用于供给液体的供给口的硅基板，包括以下步骤：提供硅基板，设置有与供给对应的开口的掩模层 端口设置在硅衬底的一个面上; 沿着掩模层中的开口的形状在硅衬底中形成凹槽; 从硅衬底中的槽的内壁去除，使用喷砂，硅衬底的硅; 并且从一面进行已经喷砂的硅基板的各向异性蚀刻，并形成供给口。

公开(公告)号：US08613862B2

公开(公告)日：2013-12-24

申请号：US12203612

申请日：2008-09-03

申请人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

发明人： Kazuhiro Asai ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

IPC分类号： G01D15/00 ,  G11B5/127

CPC分类号： B41J2/1603 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1639 ,  B41J2/1645

摘要： A manufacturing method, for a liquid discharge head substrate that includes a silicon substrate in which a liquid supply port is formed, includes the steps of: preparing the silicon substrate, on one face of which a mask layer, in which an opening has been formed, is deposited; forming a first recessed portion in the silicon substrate, so that the recessed portion is extended through the opening from the one face of the silicon substrate to the other, reverse face of the silicon substrate; forming a second recessed portion by performing wet etching for the substrate, via the first recessed portion, using the mask layer; and performing dry etching for the silicon substrate in a direction from the second recessed portion to the other face.

摘要翻译： 一种液体排出头基板的制造方法，其特征在于，具备形成有液体供给口的硅基板的液体排出头基板的制造方法，其特征在于，包括以下工序：制作所述硅基板，在其一面上形成有开口的掩模层 ，存放 在所述硅衬底中形成第一凹部，使得所述凹部从所述硅衬底的一个面向所述开口延伸到所述硅衬底的另一面; 通过使用掩模层经由第一凹部对基板进行湿法蚀刻来形成第二凹部; 并且在从第二凹部到另一面的方向上对硅衬底进行干蚀刻。

公开(公告)号：US08114305B2

公开(公告)日：2012-02-14

申请号：US12203651

申请日：2008-09-03

申请人： Hiroto Komiyama ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Keisuke Kishimoto ,  Kazuhiro Asai ,  Shimpei Otaka

发明人： Hiroto Komiyama ,  Hirokazu Komuro ,  Satoshi Ibe ,  Takuya Hatsui ,  Keisuke Kishimoto ,  Kazuhiro Asai ,  Shimpei Otaka

IPC分类号： G01D15/00 ,  G11B5/127

CPC分类号： B41J2/1603 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1634 ,  B41J2/1639

摘要： A method of manufacturing a silicon substrate for a liquid discharge head with a liquid supply opening formed therein includes: forming one processed portion by laser processing on the substrate from one surface of the substrate; expanding the one processed portion to form a recess portion by performing laser processing at a position which overlaps a part of the one processed portion and does not overlap another part of the one processed portion; and etching from the one surface the substrate with the recess portion formed therein to form the liquid supply opening.

摘要翻译： 制造其中形成有液体供应开口的液体排出头用硅基板的方法包括：通过激光加工在基板的一个表面上形成一个处理部分; 通过在与所述一个处理部分的一部分重叠的位置处进行激光处理并且不与所述一个处理部分的另一部分重叠来扩展所述一个处理部分以形成凹部; 并且从一个表面蚀刻具有形成在其中的凹部的基板以形成液体供应​​开口。

公开(公告)号：US08091234B2

公开(公告)日：2012-01-10

申请号：US12203681

申请日：2008-09-03

申请人： Satoshi Ibe ,  Hirokazu Komuro ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

发明人： Satoshi Ibe ,  Hirokazu Komuro ,  Takuya Hatsui ,  Kazuhiro Asai ,  Shimpei Otaka ,  Hiroto Komiyama ,  Keisuke Kishimoto

IPC分类号： B21D53/76 ,  B23P17/00

CPC分类号： B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1634 ,  B41J2/1635 ,  B41J2/1645 ,  Y10T29/49401

摘要： A manufacturing method, for a liquid discharge head that includes a silicon substrate in which a supply port is formed for supplying a liquid, includes the steps of providing the silicon substrate, a mask layer provided with an opening that corresponds to the supply port being provided on one face of the silicon substrate; forming a groove in the silicon substrate along the shape of the opening in the mask layer; removing, via sandblasting, silicon of the silicon substrate inward of the groove in the silicon substrate; and performing, from the one face, anisotropic etching of the silicon substrate that has been sandblasted, and forming the supply port.

摘要翻译： 一种液体排出头的制造方法，其特征在于，包括形成有用于供给液体的供给口的硅基板的液体排出头，其特征在于，具备：提供所述硅基板的工序;设置有与供给口对应的开口的掩模层 在硅衬底的一个面上; 沿着掩模层中的开口的形状在硅衬底中形成凹槽; 通过喷砂将硅衬底中的硅从硅衬底中的凹槽向内移除; 并且从一面进行已经喷砂的硅基板的各向异性蚀刻，并形成供给口。

公开(公告)号：US08286351B2

公开(公告)日：2012-10-16

申请号：US12983505

申请日：2011-01-03

申请人： Keiji Edamatsu ,  Yoshinori Tagawa ,  Kazuhiro Asai ,  Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Masataka Nagai

发明人： Keiji Edamatsu ,  Yoshinori Tagawa ,  Kazuhiro Asai ,  Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Masataka Nagai

IPC分类号： B21D53/76 ,  B23P17/00

CPC分类号： B41J2/1603 ,  B41J2/162 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1645 ,  B41J2002/14475 ,  B41J2202/11 ,  Y10T29/42 ,  Y10T29/49401

摘要： There is disclosed a manufacturing method of a liquid discharge head including a substrate in which a first energy generating element and a second energy generating element that generate energy used for discharging liquid are provided, a discharge port member in which a first discharge port discharging the liquid is provided corresponding to the first energy generating element and a second discharge port discharging the liquid is provided corresponding to the second energy generating element, and a flow path wall member having a portion of the liquid flow path wall that communicates with the first discharge port and the second discharge port, in which a distance between the second energy generating element and the second discharge port is larger than that between the first energy generating element and the first discharge port.

摘要翻译： 公开了一种液体排出头的制造方法，该液体排出头包括：基材，其中设置有产生用于排出液体的能量的第一能量产生元件和第二能量产生元件;排出口构件，其中排出液体的第一排出口 对应于第一能量产生元件设置并且排出液体的第二排出口对应于第二能量产生元件设置;流路壁构件，其具有与第一排出口连通的液体流路壁的一部分， 第二排出口，其中第二能量产生元件和第二排出口之间的距离大于第一能量产生元件和第一排出口之间的距离。

公开(公告)号：US20110167636A1

公开(公告)日：2011-07-14

申请号：US12983505

申请日：2011-01-03

申请人： Keiji Edamatsu ,  Yoshinori Tagawa ,  Kazuhiro Asai ,  Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Masataka Nagai

发明人： Keiji Edamatsu ,  Yoshinori Tagawa ,  Kazuhiro Asai ,  Satoshi Ibe ,  Hiroto Komiyama ,  Toshiaki Kurosu ,  Masataka Nagai

IPC分类号： B21D53/00

CPC分类号： B41J2/1603 ,  B41J2/162 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1645 ,  B41J2002/14475 ,  B41J2202/11 ,  Y10T29/42 ,  Y10T29/49401

摘要： There is disclosed a manufacturing method of a liquid discharge head including a substrate in which a first energy generating element and a second energy generating element that generate energy used for discharging liquid are provided, a discharge port member in which a first discharge port discharging the liquid is provided corresponding to the first energy generating element and a second discharge port discharging the liquid is provided corresponding to the second energy generating element, and a flow path wall member having a portion of the liquid flow path wall that communicates with the first discharge port and the second discharge port, in which a distance between the second energy generating element and the second discharge port is larger than that between the first energy generating element and the first discharge port.

摘要翻译： 公开了一种液体排出头的制造方法，该液体排出头包括：基材，其中设置有产生用于排出液体的能量的第一能量产生元件和第二能量产生元件;排出口构件，其中排出液体的第一排出口 对应于第一能量产生元件设置并且排出液体的第二排出口对应于第二能量产生元件设置;流路壁构件，其具有与第一排出口连通的液体流路壁的一部分， 第二排出口，其中第二能量产生元件和第二排出口之间的距离大于第一能量产生元件和第一排出口之间的距离。