发明申请
- 专利标题： METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11964516申请日： 2007-12-26
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公开(公告)号： US20090068813A1公开(公告)日： 2009-03-12
- 发明人: Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- 申请人： Shian-Jyh Lin , Shun-Fu Chen , Tse-Chuan Kuo , An-Hsiung Liu
- 申请人地址： TW TAOYUAN
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW TAOYUAN
- 优先权： TWTW96134019 20070912
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method for fabricating the semiconductor device comprises providing a semiconductor substrate having a device region and a testkey region. A first trench is formed in the device region and a second trench is formed in the testkey region. A conductive layer with a first etching selectivity is formed in the first and second trenches. A first implantation process is performed in a first direction to form a first doped region with a first impurity and an undoped region in the conductive layer simultaneously and respectively in the device region and in the testkey region. A second implantation process is performed in the second trench to form a second doped region with a second impurity in the conductive layer, wherein the conductive layer in the second trench has a second etching selectivity higher than the first etching selectivity.
公开/授权文献
- US07803701B2 Method for fabricating a semiconductor device 公开/授权日：2010-09-28
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