发明申请
- 专利标题： Method of Fabricating a Semiconductor Device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US11855809申请日： 2007-09-14
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公开(公告)号： US20090075462A1公开(公告)日： 2009-03-19
- 发明人: Dirk Manger , Rolf Weis , Christoph Noelscher
- 申请人： Dirk Manger , Rolf Weis , Christoph Noelscher
- 主分类号： H01L21/425
- IPC分类号： H01L21/425
摘要：
The invention relates to a method of fabricating an integrated circuit, including the steps of providing at least one layer; performing a first implantation step, wherein particles are implanted into the layer under a first direction of incidence; performing a second implantation step, wherein particles are implanted into the layer under a second direction of incidence which is different from the first direction of incidence; performing a removal step, wherein the layer is partially removed depending on the local implant dose generated by the first and the second implantation step.
公开/授权文献
- US07825031B2 Method of fabricating a semiconductor device 公开/授权日：2010-11-02
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