The present invention relates to a method of forming a deposited film including a first step for setting a deposited film forming target (10) into a reaction chamber (4), a second step for filling the reaction chamber (10) with a reaction gas and a third step for applying pulse DC voltage between a first conductor (3) and a second conductor (40) spaced from each other in the reaction chamber (10). The present invention further relates to a deposited film forming device for performing the above method. Preferably, in the third step, potential difference between the first conductor (3) and the second conductor (40) is set to not less than 50V and not more than 3000V, and pulse frequency of the pulse DC voltage applied to the first and second conductors (3, 40) is set to not more than 300kHz. Duty ratio of the pulse DC voltage is set to not less than 20% and not more than 90%.