Invention Application
- Patent Title: STRESS ENHANCED SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING SAME
- Patent Title (中): 应力增强半导体器件及其制造方法
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Application No.: US11861051Application Date: 2007-09-25
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Publication No.: US20090078991A1Publication Date: 2009-03-26
- Inventor: Akif SULTAN , Mark MICHAEL , David WU , Donna Michael
- Applicant: Akif SULTAN , Mark MICHAEL , David WU , Donna Michael
- Applicant Address: US TX Austin
- Assignee: ADVANCED MICRO DEVICES, INC.
- Current Assignee: ADVANCED MICRO DEVICES, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/762
Abstract:
A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.
Public/Granted literature
- US07638837B2 Stress enhanced semiconductor device and methods for fabricating same Public/Granted day:2009-12-29
Information query
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