公开(公告)号：US09407890B2

公开(公告)日：2016-08-02

申请号：US12353826

申请日：2009-01-14

Applicant: Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

Inventor： Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

IPC: H04N9/77 ,  H04N9/64

CPC classification number: H04N9/77 ,  H04N9/646

Abstract: A video processing system may be operable to utilize multi-band sharpening to process luma signals for image signals. The luma signal may be decomposed into a plurality of frequency band components, wherein each component may be processed separately using different sharpening gains and/or offsets. The multi-band processed components may be combined to generate sharpened output luma signals. The multi-band sharpening may be performed utilizing peaking processing, and the input luma signal and/or LTI sharpened luma signals may be combined with the multi-band peaking sharpened signals to generate the sharpened output luma signals. Corresponding chroma signals may also be adjusted to generate sharpened output chroma signals. Luma and/or chroma sharpening operations may be further adjusted based on coring, clipping avoidance, luma statistics, color region detections, and/or curve control parameters. Sharpened output image signals may be generated based on the sharpened output luma signals and the sharpened output chroma signals.

Abstract translation: 视频处理系统可以用于利用多频带锐化来处理图像信号的亮度信号。 亮度信号可以被分解成多个频带分量，其中每个分量可以使用不同的锐化增益和/或偏移分别进行处理。 可以组合多波段处理的分量以产生锐化的输出亮度信号。 可以使用峰化处理来执行多频带锐化，并且可以将输入亮度信号和/或LTI锐化亮度信号与多频带峰值锐化信号组合以产生锐化的输出亮度信号。 也可以调整相应的色度信号以产生锐化的输出色度信号。 可以基于取芯，限制避免，亮度统计，颜色区域检测和/或曲线控制参数来进一步调节亮度和/或色度磨削操作。 可以基于锐化的输出亮度信号和锐化的输出色度信号来产生锐化的输出图像信号。

公开(公告)号：US20130260822A1

公开(公告)日：2013-10-03

申请号：US13435391

申请日：2012-03-30

Applicant: Shing-Wai David Wu

Inventor： Shing-Wai David Wu

IPC: H04M1/00

CPC classification number: G06F1/1616 ,  G06F1/1632 ,  G06F1/169 ,  H04M1/72527 ,  H04M2250/22

Abstract: A notebook computer device has a body and a display panel pivotally attached to the body. A receptacle is provided in the body to receive a mobile touch screen telephone in an orientation to present the telephone's touch screen to the user for use as a notebook computer touchpad while viewing the display panel. A display interface is provided for relaying signals from the mobile telephone so that user-manipulation of the touch screen is conveyed to the display panel.

Abstract translation: 笔记本电脑设备具有主体和枢转地附接到主体的显示面板。 在本体中设置容器以接收移动触摸屏电话，以便在观看显示面板的同时将电话的触摸屏呈现给用户以用作笔记本电脑触摸板。 提供了用于中继来自移动电话的信号的显示接口，使得触摸屏的用户操纵被传送到显示面板。

公开(公告)号：US20120007182A1

公开(公告)日：2012-01-12

申请号：US13239865

申请日：2011-09-22

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L27/12

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US08048753B2

公开(公告)日：2011-11-01

申请号：US12483737

申请日：2009-06-12

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L21/331 ,  H01L21/8222

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US20100314685A1

公开(公告)日：2010-12-16

申请号：US12483737

申请日：2009-06-12

Applicant: Jingrong Zhou ,  David Wu ,  James F. Buller

Inventor： Jingrong Zhou ,  David Wu ,  James F. Buller

IPC: H01L27/06 ,  H01L21/77

CPC classification number: H01L27/0255 ,  H01L21/84 ,  H01L27/1203

Abstract: Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.

Abstract translation: 形成具有改进的电荷保护的浅沟槽隔离绝缘体上硅（SOI）器件。 实施例包括作为充电保护装置的SOI膜二极管和P +衬底结。 实施例还包括从SOI晶体管漏极，通过导电触点，金属线，第二导电触点，与晶体管隔离的SOI二极管，第三导电触点，第二导线和第四导电触点的导电路径 到SOI衬底的体硅层中的P +掺杂的衬底接触。

公开(公告)号：US07761838B2

公开(公告)日：2010-07-20

申请号：US11861492

申请日：2007-09-26

Applicant: Zhonghai Shi ,  Mark Michael ,  Donna Michael, legal representative ,  David Wu ,  James F. Buller ,  Jingrong Zhou ,  Akif Sultan

Inventor： Zhonghai Shi ,  Mark Michael ,  David Wu ,  James F. Buller ,  Jingrong Zhou ,  Akif Sultan

IPC: G06F17/50 ,  H01L21/8238

CPC classification number: H01L21/823807 ,  H01L29/78 ,  H01L29/7843

Abstract: The techniques and technologies described herein relate to the automatic creation of photoresist masks for stress liners used with semiconductor based transistor devices. The stress liner masks are generated with automated design tools that leverage layout data corresponding to features, devices, and structures on the wafer. A resulting stress liner mask (and wafers fabricated using the stress liner mask) defines a stress liner coverage area that extends beyond the boundary of the transistor area and into a stress insensitive area of the wafer. The extended stress liner further enhances performance of the respective transistor by providing additional compressive/tensile stress.

Abstract translation: 本文所述的技术和技术涉及自动创建与半导体基晶体管器件一起使用的应力衬垫的光致抗蚀剂掩模。 应力衬垫掩模是利用自动设计工具生成的，其利用与晶片上的特征，器件和结构对应的布局数据。 产生的应力衬垫掩模（以及使用应力衬垫掩模制造的晶片）限定了延伸超出晶体管区域的边界并进入晶片的应力不敏感区域的应力衬垫覆盖区域。 延伸的应力衬垫通过提供额外的压缩/拉伸应力来进一步提高相应晶体管的性能。

公开(公告)号：US07638837B2

公开(公告)日：2009-12-29

申请号：US11861051

申请日：2007-09-25

Applicant: Akif Sultan ,  Mark Michael ,  Donna Michael, legal representative ,  David Wu

Inventor： Akif Sultan ,  Mark Michael ,  David Wu

IPC: H01L27/092

CPC classification number: H01L21/823807 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/7843

Abstract: A stress-enhanced semiconductor device is provided which includes a substrate having an inactive region and an active region, a first-type stress layer overlying at least a portion of the active region, and a second-type stress layer. The active region includes a first lateral edge which defines a first width of the active region, and a second lateral edge which defines a second width of the active region. The second-type stress layer is disposed adjacent the second lateral edge of the active region.

Abstract translation: 提供一种应力增强型半导体器件，其包括具有非活性区域和有源区域的衬底，覆盖有源区域的至少一部分的第一类型应力层和第二类型应力层。 有源区域包括限定有源区域的第一宽度的第一侧边缘和限定有源区域的第二宽度的第二侧边缘。 第二类应力层设置在活动区域​​的第二侧边缘附近。

公开(公告)号：US07576357B1

公开(公告)日：2009-08-18

申请号：US11259572

申请日：2005-10-26

Applicant: Jianhong Zhu ,  David Wu

Inventor： Jianhong Zhu ,  David Wu

IPC: H01L23/58

CPC classification number: H01L22/14 ,  H01L23/5223 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of detecting damage to at least one dielectric layer in an IC die by determining a capacitance factor. The capacitance factor can be used to determine damage in a low-k dielectric material. A system for detecting damage can include a conductive line structure for measuring capacitance and software or a device for determining the capacitance to determine the damage.

Abstract translation: 一种通过确定电容因子来检测IC芯片中的至少一个电介质层的损伤的方法。 电容因数可用于确定低k电介质材料的损伤。 用于检测损伤的系统可以包括用于测量电容和软件的导线结构或用于确定电容以确定损坏的装置。

公开(公告)号：US20090180030A1

公开(公告)日：2009-07-16

申请号：US12353826

申请日：2009-01-14

Applicant: Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

Inventor： Jaewon Shin ,  Brian Schoner ,  Darren Neuman ,  David Wu

IPC: H04N9/77

CPC classification number: H04N9/77 ,  H04N9/646

Abstract: A video processing system may be operable to utilize multi-band sharpening to process luma signals for image signals. The luma signal may be decomposed into a plurality of frequency band components, wherein each component may be processed separately using different sharpening gains and/or offsets. The multi-band processed components may be combined to generate sharpened output luma signals. The multi-band sharpening may be performed utilizing peaking processing, and the input luma signal and/or LTI sharpened luma signals may be combined with the multi-band peaking sharpened signals to generate the sharpened output luma signals. Corresponding chroma signals may also be adjusted to generate sharpened output chroma signals. Luma and/or chroma sharpening operations may be further adjusted based on coring, clipping avoidance, luma statistics, color region detections, and/or curve control parameters. Sharpened output image signals may be generated based on the sharpened output luma signals and the sharpened output chroma signals.

Abstract translation: 视频处理系统可以用于利用多频带锐化来处理图像信号的亮度信号。 亮度信号可以被分解成多个频带分量，其中每个分量可以使用不同的锐化增益和/或偏移分别进行处理。 可以组合多波段处理的分量以产生锐化的输出亮度信号。 可以使用峰化处理来执行多频带锐化，并且可以将输入亮度信号和/或LTI锐化亮度信号与多频带峰值锐化信号组合以产生锐化的输出亮度信号。 也可以调整相应的色度信号以产生锐化的输出色度信号。 可以基于取芯，限制避免，亮度统计，颜色区域检测和/或曲线控制参数来进一步调整亮度和/或色度磨削操作。 可以基于锐化的输出亮度信号和锐化的输出色度信号来产生锐化的输出图像信号。

公开(公告)号：US20080114605A1

公开(公告)日：2008-05-15

申请号：US11558168

申请日：2006-11-09

Applicant: David Wu ,  Keith Klinger

Inventor： David Wu ,  Keith Klinger

IPC: G10L19/00

CPC classification number: H03H17/0621 ,  G11B20/00007 ,  G11B20/10037 ,  G11B20/10527 ,  G11B2020/00014 ,  G11B2020/10592 ,  G11B2020/10981 ,  G11B2220/2541 ,  G11B2220/2579 ,  H03H2218/06

Abstract: A method and system for performing sample rate conversion is provided. The method may include configuring a system to convert a sample rate of a first audio channel of a plurality of audio channels to produce a first audio stream of samples. The system may be dynamically reconfigured to convert a sample rate of a second of the plurality of audio channels to produce a second audio stream of samples, wherein the first and second audio streams are output from the system at the same time. The method may further include arbitrating between request for additional data from the first and second audio stream of samples, where processing of the first channel is suspended when the request corresponds to a second channel that is of higher priority.

Abstract translation: 提供了一种用于执行采样率转换的方法和系统。 该方法可以包括配置系统以转换多个音频通道中的第一音频通道的采样率以产生第一音频采样流。 系统可以被动态地重新配置以转换多个音频通道中的第二个音频通道的采样率，以产生第二音频采样流，其中同时从系统输出第一和第二音频流。 该方法还可以包括在来自第一和第二音频采样流的对附加数据的请求之间进行仲裁，其中当请求对应于具有较高优先级的第二信道时，暂停第一信道的处理。