发明申请
- 专利标题： MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME
- 专利标题（中）： 磁性元件和磁阻随机存取存储器
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申请号： US12211388申请日： 2008-09-16
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公开(公告)号： US20090080238A1公开(公告)日： 2009-03-26
- 发明人: Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人： Masatoshi YOSHIKAWA , Eiji Kitagawa , Tadaomi Daibou , Toshihiko Nagase , Tatsuya Kishi , Hiroaki Yoda
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 优先权： JP2007-248251 20070925
- 主分类号： G11C11/02
- IPC分类号： G11C11/02 ; H01L29/82 ; G11C11/14 ; G11C7/00
摘要：
The present invention provides a low-resistance magnetoresistive element of a spin-injection write type. A crystallization promoting layer that promotes crystallization is formed in contact with an interfacial magnetic layer having an amorphous structure, so that crystallization is promoted from the side of a tunnel barrier layer, and the interface between the tunnel barrier layer and the interfacial magnetic layer is adjusted. With this arrangement, it is possible to form a magnetoresistive element that has a low resistance so as to obtain a desired current value, and has a high TMR ratio.