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    Magnetoresistive element and magnetic memory
    4.
    发明授权
    Magnetoresistive element and magnetic memory 有权
    磁阻元件和磁记忆体

    公开(公告)号：US08686521B2

    公开(公告)日：2014-04-01

    申请号：US12716582

    申请日：2010-03-03

    申请人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Tadaomi Daibou ,  Toshihiko Nagase ,  Eiji Kitagawa ,  Masatoshi Yoshikawa ,  Katsuya Nishiyama ,  Makoto Nagamine ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： H01L29/82

    CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element includes a stabilization layer, a nonmagnetic layer, a spin-polarization layer provided between the stabilization layer and the nonmagnetic layer, the spin-polarization layer having magnetic anisotropy in a perpendicular direction, and a magnetic layer provided on a side of the nonmagnetic layer opposite to a side on which the spin-polarization layer is provided. The stabilization layer has a lattice constant smaller than that of the spin-polarization layer in an in-plane direction. The spin-polarization layer contains at least one element selected from a group consisting of cobalt (Co) and iron (Fe), has a body-centered tetragonal (BCT) structure, and has a lattice constant ratio c/a of 1.10 (inclusive) to 1.35 (inclusive) when a perpendicular direction is a c-axis and an in-plane direction is an a-axis.

    摘要翻译： 磁阻元件包括稳定层，非磁性层，设置在稳定层和非磁性层之间的自旋极化层，垂直方向具有磁各向异性的自旋极化层，以及设置在 非磁性层与设置有自旋极化层的一侧相反。 稳定层的面内方向的晶格常数小于自旋极化层的晶格常数。 自旋极化层含有选自钴（Co）和铁（Fe）中的至少一种元素，具有体心四方晶（BCT）结构，晶格常数比c / a为1.10（含 ）为1.35（含），当垂直方向为c轴且面内方向为a轴时。

    MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME
    5.
    发明申请
    MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME 审中-公开
    磁性元件和磁阻随机存取存储器

    公开(公告)号：US20090080124A1

    公开(公告)日：2009-03-26

    申请号：US12210496

    申请日：2008-09-15

    申请人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    发明人： Masatoshi Yoshikawa ,  Tadaomi Daibou ,  Eiji Kitagawa ,  Toshihiko Nagase ,  Tatsuya Kishi ,  Hiroaki Yoda

    IPC分类号： G11B5/127

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/10

    摘要： A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material.

    摘要翻译： 磁阻元件包括：具有垂直于膜平面的磁化的第一磁化参考层，磁化方向在一个方向上是不变的; 具有垂直于膜平面的磁化的无磁化层，磁化方向可变; 设置在所述第一磁化参考层和所述无磁化层之间的第一中间层; 磁性相变层，其设置在与第一中间层的磁化自由层的相对侧上，磁性相变层被磁耦合到无磁化层，并且能够双向地执行反铁磁材料和 铁磁材料; 以及激励层，其设置在与所述磁化自由层相反的所述磁性相变层的相反侧，并且使所述磁性相变层进行从所述反铁磁材料到所述铁磁性材料的磁相变。