发明申请
- 专利标题： TWO-BIT FLASH MEMORY
- 专利标题（中）： 两位闪存
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申请号： US12099168申请日： 2008-04-08
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公开(公告)号： US20090085089A1公开(公告)日： 2009-04-02
- 发明人: Ming-Cheng Chang , Wei-Ming Liao , Jer-Chyi Wang , Yi-Feng Chang
- 申请人： Ming-Cheng Chang , Wei-Ming Liao , Jer-Chyi Wang , Yi-Feng Chang
- 申请人地址： TW Taoyuan
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW Taoyuan
- 优先权： TW96136913 20071002
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A flash memory includes a substrate with a protrusion, a control gate, two floating gates, and a dielectric layer. The protrusion extends from a top face of the substrate. The control gate is formed on the protrusion of the substrate and extendedly covers opposite sidewalls of the protrusion. The floating gates are respectively formed on top of the protrusion and being on two opposite sides of the control gate. The dielectric layer is sandwiched the control gate and each of the two floating gates. Because of the arcuate control gate used in the flash memory, the controllability of the control gate is increased and the memory cell window is enhanced.
公开/授权文献
- US07956403B2 Two-bit flash memory 公开/授权日：2011-06-07
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