发明申请
- 专利标题： Through-Silicon Vias and Methods for Forming the Same
- 专利标题（中）： 通硅通孔和形成方法
-
申请号： US11874009申请日： 2007-10-17
-
公开(公告)号： US20090102021A1公开(公告)日： 2009-04-23
- 发明人: Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Kuo-Ching Steven Hsu , Kai-Ming Ching
- 申请人： Chih-Hua Chen , Chen-Shien Chen , Chen-Cheng Kuo , Kuo-Ching Steven Hsu , Kai-Ming Ching
- 主分类号： H01L23/488
- IPC分类号： H01L23/488 ; H01L21/44
摘要：
An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a substrate; a through-silicon via (TSV) extending into the substrate; a TSV pad spaced apart from the TSV; and a metal line over, and electrically connecting, the TSV and the TSV pad.
公开/授权文献
- US08476769B2 Through-silicon vias and methods for forming the same 公开/授权日：2013-07-02
信息查询
IPC分类:
