发明申请
- 专利标题： GALLIUM NITRIDE MATERIALS AND METHODS
- 专利标题（中）： 氮化铝材料和方法
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申请号： US12343616申请日： 2008-12-24
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公开(公告)号： US20090104758A1公开(公告)日： 2009-04-23
- 发明人: T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
- 申请人： T. Warren Weeks, JR. , Edwin L. Piner , Thomas Gehrke , Kevin J. Linthicum
- 申请人地址： US NC Durham
- 专利权人： Nitronex Corporation
- 当前专利权人： Nitronex Corporation
- 当前专利权人地址： US NC Durham
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
公开/授权文献
- US08105921B2 Gallium nitride materials and methods 公开/授权日：2012-01-31
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