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1.发明授权Gallium nitride semiconductor structures with compositionally-graded transition layer 有权具有组成梯度过渡层的氮化镓半导体结构公开(公告)号：US08344417B2
公开(公告)日：2013-01-01
申请号：US13359892
申请日：2012-01-27
IPC分类号： H01L31/72
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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2.发明授权公开(公告)号：US07364988B2
公开(公告)日：2008-04-29
申请号：US11147342
申请日：2005-06-08
IPC分类号： H01L21/20
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译： 异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。
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公开(公告)号：US06617060B2
公开(公告)日：2003-09-09
申请号：US10188814
申请日：2002-07-02
IPC分类号： B32B900
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
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公开(公告)号：US08105921B2
公开(公告)日：2012-01-31
申请号：US12343616
申请日：2008-12-24
IPC分类号： H01L21/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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5.发明申请Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer 有权具有组成梯度过渡层的氮化镓半导体结构公开(公告)号：US20120119223A1
公开(公告)日：2012-05-17
申请号：US13359892
申请日：2012-01-27
IPC分类号： H01L29/772 , H01L29/205
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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公开(公告)号：US07485512B2
公开(公告)日：2009-02-03
申请号：US11474431
申请日：2006-06-26
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.
摘要翻译： 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。
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公开(公告)号：US07326971B2
公开(公告)日：2008-02-05
申请号：US11147341
申请日：2005-06-08
IPC分类号： H01L29/778
CPC分类号： H01L29/7783 , H01L29/2003
摘要： A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.
摘要翻译： 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。
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公开(公告)号：US06649287B2
公开(公告)日：2003-11-18
申请号：US09736972
申请日：2000-12-14
IPC分类号： B32B900
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
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公开(公告)号：US20090104758A1
公开(公告)日：2009-04-23
申请号：US12343616
申请日：2008-12-24
IPC分类号： H01L21/20
CPC分类号： H01L29/155 , C30B23/02 , C30B23/025 , C30B25/02 , C30B25/18 , C30B25/183 , C30B29/06 , C30B29/403 , C30B29/406 , C30B29/68 , H01L21/02381 , H01L21/02422 , H01L21/0243 , H01L21/02433 , H01L21/0245 , H01L21/02458 , H01L21/02507 , H01L21/0251 , H01L21/0254 , H01L21/02598 , H01L21/0262 , H01L29/04 , H01L29/045 , H01L29/0649 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/225 , H01L29/66462 , H01L29/7787 , H01L29/78 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/04 , H01L33/06 , H01L33/12 , H01L33/32 , Y10T428/24942 , Y10T428/26 , Y10T428/265
摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.
摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的低应力成分分级。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。
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