公开(公告)号：US20090104758A1

公开(公告)日：2009-04-23

申请号：US12343616

申请日：2008-12-24

申请人： T. Warren Weeks, JR. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

发明人： T. Warren Weeks, JR. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

IPC分类号： H01L21/20

CPC分类号： H01L29/155 ,  C30B23/02 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/225 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的低应力成分分级。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。

公开(公告)号：US20120119223A1

公开(公告)日：2012-05-17

申请号：US13359892

申请日：2012-01-27

申请人： T. Warren Weeks, JR. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

发明人： T. Warren Weeks, JR. ,  Edwin L. Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

IPC分类号： H01L29/772 ,  H01L29/205

CPC分类号： H01L29/155 ,  C30B23/02 ,  C30B23/025 ,  C30B25/02 ,  C30B25/18 ,  C30B25/183 ,  C30B29/06 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02422 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02598 ,  H01L21/0262 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/225 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/78 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  Y10T428/24942 ,  Y10T428/26 ,  Y10T428/265

摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

摘要翻译： 本发明提供了包括在硅衬底上形成的氮化镓材料层的半导体材料以及形成半导体材料的方法。 半导体材料包括在硅衬底和氮化镓材料层之间形成的过渡层。 过渡层由氮化镓材料与衬底之间的热膨胀速率差异导致的氮化镓材料层中的应力成分梯度降低。 氮化镓材料层中的应力降低降低了形成裂纹的倾向。 因此，本发明能够生产包括几乎没有或没有裂纹的氮化镓材料层的半导体材料。 半导体材料可以用于许多微电子和光学应用中。