发明申请
- 专利标题: Optoelectronic device
- 专利标题(中): 光电器件
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申请号: US12318195申请日: 2008-12-23
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公开(公告)号: US20090108286A1公开(公告)日: 2009-04-30
- 发明人: Jin-Ywan Lin , Jen-Chau Wu , Chih-Chiang Lu , Wei-Chih Peng , Ching-Pu Tai , Shih-I Chen
- 申请人: Jin-Ywan Lin , Jen-Chau Wu , Chih-Chiang Lu , Wei-Chih Peng , Ching-Pu Tai , Shih-I Chen
- 申请人地址: TW Hsinchu
- 专利权人: EPISTAR CORPORATION
- 当前专利权人: EPISTAR CORPORATION
- 当前专利权人地址: TW Hsinchu
- 优先权: TW096109432 20070319
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.
公开/授权文献
- US07777240B2 Optoelectronic device 公开/授权日:2010-08-17
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