公开(公告)号：US08049242B2

公开(公告)日：2011-11-01

申请号：US12835066

申请日：2010-07-13

申请人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

发明人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

公开(公告)号：US07777240B2

公开(公告)日：2010-08-17

申请号：US12318195

申请日：2008-12-23

申请人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

发明人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，可以对第一金属电极层进行图案化，使得电流均匀地扩散到发光二极管芯片。

公开(公告)号：US20090108286A1

公开(公告)日：2009-04-30

申请号：US12318195

申请日：2008-12-23

申请人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

发明人： Jin-Ywan Lin ,  Jen-Chau Wu ,  Chih-Chiang Lu ,  Wei-Chih Peng ,  Ching-Pu Tai ,  Shih-I Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/382

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

公开(公告)号：US20080230791A1

公开(公告)日：2008-09-25

申请号：US12076465

申请日：2008-03-19

申请人： Jin-Ywan LIN ,  Jen-Chau Wu ,  Chih-Chiang LU ,  Wei-Chih Peng ,  Jing-Fu Dai ,  Shih-Yi Chen

发明人： Jin-Ywan LIN ,  Jen-Chau Wu ,  Chih-Chiang LU ,  Wei-Chih Peng ,  Jing-Fu Dai ,  Shih-Yi Chen

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An optoelectronic device such as a light-emitting diode chip is disclosed. It includes a substrate, a multi-layer epitaxial structure, a first metal electrode layer, a second metal electrode layer, a first bonding pad and a second bonding pad. The multi-layer epitaxial structure on the transparent substrate comprises a semiconductor layer of a first conductive type, an active layer, and a semiconductor layer of a second conductive type. The first bonding pad and the second bonding pad are on the same level. Furthermore, the first metal electrode layer can be patterned so the current is spread to the light-emitting diode chip uniformly.

摘要翻译： 公开了诸如发光二极管芯片的光电子器件。 它包括衬底，多层外延结构，第一金属电极层，第二金属电极层，第一焊盘和第二接合焊盘。 透明基板上的多层外延结构包括第一导电类型，有源层和第二导电类型的半导体层的半导体层。 第一接合焊盘和第二接合焊盘在同一水平面上。 此外，第一金属电极层可以被图案化，使得电流均匀地扩散到发光二极管芯片。

公开(公告)号：US20090029492A1

公开(公告)日：2009-01-29

申请号：US12231164

申请日：2008-08-29

申请人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

摘要翻译： 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US20060079013A1

公开(公告)日：2006-04-13

申请号：US11008390

申请日：2004-12-10

申请人： Tzu-Ying Yen ,  Han-Tsun Lai ,  Jen-Chau Wu ,  Chung-Cheng Tu

发明人： Tzu-Ying Yen ,  Han-Tsun Lai ,  Jen-Chau Wu ,  Chung-Cheng Tu

IPC分类号： H01L21/00

CPC分类号： H01L33/38

摘要： A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a pattern including a light emitting area located on the light-emitting surface of the epitaxy structure. The first electrode is located on the substrate, and the isolation layer is located on the epitaxy structure adjacent to the first electrode. The contact layer is located on the first electrode, and the bonding layer is located on one portion of the isolation layer. The connection bridge with a width less than one half of the diameter of the light emitting area is located on the other portion of the isolation layer, thereby connecting the contact layer and the bonding layer.

摘要翻译： 点源发光二极管（LED）包括衬底，外延结构，第一电极，隔离层，接合层，接触层和连接桥。 外延结构位于基板上，并且基板具有包括位于外延结构的发光表面上的发光区域的图案。 第一电极位于衬底上，隔离层位于与第一电极相邻的外延结构上。 接触层位于第一电极上，接合层位于隔离层的一部分上。 宽度小于发光区域直径的一半的连接桥位于隔离层的另一部分，从而连接接触层和接合层。

公开(公告)号：US06995403B2

公开(公告)日：2006-02-07

申请号：US10655150

申请日：2003-09-03

申请人： Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Cheng-Chung Young ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L29/22 ,  H01L29/221 ,  H01L29/225 ,  H01L29/24 ,  H01L29/739

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/14

摘要： A light emitting device is disclosed. The light emitting device comprises a contact layer and an oxide transparent layer located directly on the contact layer. The contact layer has a stacked structure formed by alternately stacking a plurality of nitride semiconductor layers having a wider bandgap and a plurality of nitride semiconductor layers having a narrower bandgap.

摘要翻译： 公开了一种发光器件。 发光器件包括直接位于接触层上的接触层和氧化物透明层。 接触层具有通过交替堆叠具有较宽带隙的多个氮化物半导体层和具有较窄带隙的多个氮化物半导体层而形成的层叠结构。

公开(公告)号：US07704760B2

公开(公告)日：2010-04-27

申请号：US12231164

申请日：2008-08-29

申请人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

发明人： Chuan-Cheng Tu ,  Pao-I Huang ,  Jen-Chau Wu

IPC分类号： H01L21/00

CPC分类号： H01L33/22

摘要： A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

摘要翻译： 公开了一种制造发光二极管（LED）的方法。 本发明的LED包括第一极性的半导体层，有源层和从底部至上层叠的第二极性的半导体层，其中至少由有源层和半导体层组成的层叠结构 第二极性在LED和/或至少一个谷的俯视图中具有波形边界的一侧，从而提高将光发射到LED的外部的效率。

公开(公告)号：US07192797B2

公开(公告)日：2007-03-20

申请号：US11249680

申请日：2005-10-12

申请人： Chuan-Cheng Tu ,  Jen-Chau Wu ,  Yuh-Ren Shieh

发明人： Chuan-Cheng Tu ,  Jen-Chau Wu ,  Yuh-Ren Shieh

IPC分类号： H01L21/00

CPC分类号： H01L33/385 ,  H01L25/0753 ,  H01L33/36 ,  H01L33/38 ,  H01L33/387 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： A flip-chip LED including a light emitting structure, a first dielectric layer, a first metal layer, a second metal layer, and a second dielectric layer is provided. The light emitting structure includes a first conductive layer, an active layer, and a second conductive layer. The active layer is disposed on the first conductive layer, and the second conductive layer is disposed on the active layer. The first metal layer is disposed on the light emitting structure and is contact with the first conductive layer, and part of the first metal layer is disposed on the first dielectric layer. The second metal layer is disposed on the light emitting structure and is in contact with the second conductive layer, and part of the second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer.

摘要翻译： 提供了包括发光结构，第一介电层，第一金属层，第二金属层和第二介电层的倒装LED。 发光结构包括第一导电层，有源层和第二导电层。 有源层设置在第一导电层上，第二导电层设置在有源层上。 第一金属层设置在发光结构上并与第一导电层接触，第一金属层的一部分设置在第一介电层上。 第二金属层设置在发光结构上并与第二导电层接触，第二金属层的一部分设置在第一介电层上。 第二电介质层设置在第一电介质层上。

公开(公告)号：US07154149B2

公开(公告)日：2006-12-26

申请号：US10791709

申请日：2004-03-04

申请人： Jen-Chau Wu ,  Cheng-Chung Yang ,  Rong-Yih Hwang ,  Chuan-Cheng Tu

发明人： Jen-Chau Wu ,  Cheng-Chung Yang ,  Rong-Yih Hwang ,  Chuan-Cheng Tu

IPC分类号： H01L23/62

CPC分类号： H01L27/0288 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

摘要： This invention relates to an ESD protection configuration and method for light emitting diodes (LED), including an LED an LED, having a p-n junction and connected to a circuit substrate, the circuit substrate having two p-type substrates and one n-type substrate therein; a first ESD protection configuration, built-in the circuit substrate and including a first resistor, a first capacitor and a first diode that are connected in series and then engage a parallel connection with the LED, wherein the first diode has a p-node connected to an n-node of the LED; and a second ESD protection configuration, built-in the circuit substrate and including a second resistor, a second capacitor and a second diode that are connected in series and then engage a parallel connection with the LED and the first ESD protection configuration, wherein the second diode has a p-node connected to the p-node of the LED, whereby such a configuration absorbs and removes ESD induced upon human contact and prevents the LED from burning to effectively extend the lifespan of the LED.

摘要翻译： 本发明涉及一种发光二极管（LED）的ESD保护配置和方法，包括具有pn结并连接到电路基板的LED的LED，该电路基板具有两个p型基板和一个n型基板 其中 第一ESD保护配置，内置电路基板，并且包括串联连接并然后与LED并联的第一电阻器，第一电容器和第一二极管，其中第一二极管具有p节点连接 到LED的n节点; 以及第二ESD保护配置，其内置所述电路基板并且包括串联连接并且然后与所述LED和所述第一ESD保护配置的并联连接的第二电阻器，第二电容器和第二二极管，其中所述第二电阻器 二极管具有连接到LED的p节点的p节点，由此这种配置吸收和去除人接触时引起的ESD，并且防止LED燃烧以有效地延长LED的寿命。